US3762967A
Expired / Lapsed
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Method of producing a semiconductor device
Assignee: Telefunken Electronic GmbH
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Filing: 1971-03-31
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Granted: 1973-10-02
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Expires: 1991-03-31
Abstract
Abstract A method of producing a semiconductor body comprising producing at least two semiconductor regions of different types of conductivity, applying an atomic or molecular distribution of particles, which in conjunction with the material of the semiconductor body assumes a negative charge, onto an exposed region of the semiconductor body over at least one of said regions and covering the semiconductor body surface with an insulating layer.
Inventors
- 👤 H Holzer
- 👤 W Scherber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 02:40
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/91; Y10S438/974
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
102 words
A method of producing a semiconductor device comprising the steps of producing at least two regions of different types of conductivity in a semiconductor body, removing at least partially a masking layer covering the surface of said semiconductor body and produced during the production of said at least two regions, depositing a layer composed of an atomic or molecular distribution of particles onto the surface of the semiconductor body which in conjunction with the material of said semiconductor body assume a negative charge, to said exposed semiconductor surface and covering said layer of particles on said semiconductor surface with an insulating layer.
Claim 2
Dependent Claim
38 words
A method as defined in claim 2, and comprising applying said insulating layer to said semiconductor body at a temperature at which no indiffusion or only insignificant indiffusion of the applied particles into the semiconductor body takes place.
Claim 3
Dependent Claim
16 words
A method as defined in claim 2, wherein said particles comprise metal atoms in atomic distribution.
Claim 4
Dependent Claim
14 words
A method as defined in claim 4, wherein said metal atoms comprise gold atoms.
Claim 5
Dependent Claim
20 words
A method as defined in claim 5, and comprising depositing said gold atoms onto said semiconductor surface from chloroauric acid.
Claim 6
Dependent Claim
24 words
A method as defined in claim 6, and comprising surface etching said semiconductor surface with hydrofluoric acid before the deposition from said chloroauric acid.
Claim 7
Dependent Claim
21 words
A method as defined in claim 6, and comprising ultrasonically treating said exposed semiconductor surface chloroauric acid for about 15 minutes.
Claim 8
Dependent Claim
25 words
A method as defined in claim 5, and comprising applying a silicon-nitride layer is applied to the atomically distributed gold coating as said insulating layer.
Claim 9
Dependent Claim
22 words
A method as defined in claim 9, and comprising producing said silicon-nitride layer in an atmosphere of silane nitrogen, by glow discharge.
Claim 10
Dependent Claim
28 words
A method as defined in claim 2, and comprising removing said masking layer from the whole surface of said semiconductor body comprising regions of different types of conductivity.
Claim 11
Dependent Claim
22 words
A method as defined in claim 2, and comprising removing said masking layer only over the surface areas of p-type semiconductor regions.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-01 | 1977-04-02 | 1977-10-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-01 | 1981-04-02 | 1981-10-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-01 | 1985-04-02 | 1985-10-02 | $7700.00 | Window Closed / Lapsed |