US3761900A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitive matrix store
Assignee: US Philips Corp
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Filing: 1971-11-22
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Granted: 1973-09-25
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Expires: 1991-11-22
Abstract
Abstract A capacitive matrix store comprising a two-dimensional array of crosspoint elements, each of which comprises a capacitive storage element, each crosspoint element, constructed as a two-pole comprising a transistor which is provided with an emitter region, a base region and a collector region, the emitter region of said transistor forming one pole and the collector region forming the other pole of the crosspoint element, the capacitive storage element in each crosspoint element being partly or entirely formed by the collector-base capacitance of the transistor.
Inventors
- 👤 W Kasperkovitz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:51
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; H; H10; H10B; H10B12/00; H10B12/10
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
171 words
A capacitive matrix store constructed as a plurality of onedimensional arrays, each array comprising a plurality of transistor-like elements, said arrays arranged wherein said transistor-like elements are disposed in a plurality of columns and a plurality of rows, said rows situated transversely of said columns, said transistor-like elements each having an emitter region, a base region, and a collector region, the collector region of each respective transistor-like element being commonly connected across each respective row, and the emitter region of each respective transistor-like element being commonly connected across each respective column, said base region of each transistor-like element being connected to an electrical path disposed between a respective column and row of each transistorlike element, and each respective path having a capacitive storage portion formed at least in part by collector-base capacitance of the respective transistor-like element, said emitter region of each transistor-like element being connected to the base region of said respective transistor-like element to form an emitter-base diode-like path and means being provided for polarizing this emitter-base diode-like path.
Claim 2
Dependent Claim
171 words
A capacitive matrix store constructed as a plurality of onedimensional arrays, each array comprising a plurality of transistor-like elements, said arrays arranged wherein said transistor-like elements are disposed in a plurality of columns and a plurality of rows, said rows situated transversely of said columns, said transistor-like elements each having an emitter region, a base region, and a collector region, the collector region of each respective transistor-like element being commonly connected across each respective row, and the emitter region of each respective transistor-like element being commonly connected across each respective column, said base region of each transistor-like element being connected to an electrical path disposed between a respective column and row of each transistorlike element, and each respective path having a capacitive storage portion formed at least in part by collector-base capacitance of the respective transistor-like element, said emitter region of each transistor-like element being connected to the base region of said respective transistor-like element to form an emitter-base diode-like path and means being provided for polarizing this emitter-base diode-like path.
Claim 3
Dependent Claim
22 words
The capacitive matrix store of claim 1, wherein said transistor-like elements in each array are integrated in a strip of semi-conductor material.
Claim 4
Dependent Claim
26 words
The capacitive matrix store of claim 2, wherein each trip is unitarily constructed in a semiconductor body with each strip being mutually insulated from each other.
Claim 5
Dependent Claim
32 words
The capacitive matrix store of claim 1, wherein in each transistor-like element a semiconductor region is provided which is formed by an emitter diffusion between the base region and said collector region.
Claim 6
Dependent Claim
40 words
The capacitive matrix store of claim 1, wherein between two successive transistor-like elements of each one-dimensional array, one semiconductor region, formed by an emitter diffusion, is provided between the base regions and the collector regions of the two transistor-like elements.
References Cited (Backward Citations)
US3390382A
Cited
US3448344A
Cited
US3387286A
Cited
US3532945A
Cited
US3665423A
Cited
US3533089A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-24 | 1977-03-26 | 1977-09-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-24 | 1981-03-26 | 1981-09-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-24 | 1985-03-26 | 1985-09-25 | $7700.00 | Window Closed / Lapsed |