Gas cell memory system with electrical readout

Claim 3

A gas cell memory including a plurality of gas cells defined by a plurality of X lines disposed on one side of said gas cells and a plurality of Y lines disposed on the opposite side of said gas cells, first means coupled to said X lines and said Y lines for reading or extracting electronically information stored in said gas cell memory, said first means further including: second means for applying a pulse to a selected Y line, third means for applying a sinusoidal signal to all of said Y lines, the amplitude of said sinusoidal signal being less than the sustain level of said gas cells, and electrical sense means connected to said X lines, whereby (1) the potential difference established across the gas cells of the selected Y line by the sinusoidal signal and the pulse exceeds the sustain level, (2) gas cells in the binary zero state do not ignite, (3) gas cells in the binary one state ignite and couple a signal from the selected Y line to the associated X lines and (4) said sense means detects such signals on the X lines as representing binary ones and the absence of such signals on the X lines as representing binary zeros.

Claim 4

A gas cell memory including a plurality of gas cells defined by a plurality of X lines disposed on one side of said gas cells and a plurality of Y lines disposed on the opposite side of said gas cells, first means coupled to said X lines and said Y lines for reading or extracting electronically information stored in said gas cell memory, said first means further including: second means for applying a pulse to a selected Y line, third means for applying a sinusoidal signal to all of said Y lines, the amplitude of said sinusoidal signal being less than the sustain level of said gas cells, and electrical sense means connected to said X lines, whereby (1) the potential difference established across the gas cells of the selected Y line by the sinusoidal signal and the pulse exceeds the sustain level, (2) gas cells in the binary zero state do not ignite, (3) gas cells in the binary one state ignite and couple a signal from the selected Y line to the associated X lines and (4) said sense means detects such signals on the X lines as representing binary ones and the absence of such signals on the X lines as representing binary zeros.

Claim 5

sustaining or regenerating the stored information by applying a first signal to all Y lines, said first signal having an initial amplitude greater than the sustain level at all times except during read operations, and

Claim 6

sustaining or regenerating the stored information by applying a first signal to all Y lines, said first signal having an initial amplitude greater than the sustain level at all times except during read operations, and

Claim 7

writing new information in said memory by applying a pulse to a selected Y line, applying pulses to selected X lines, said pulses being applied at a selected amplitude of said sinusoidal signal, thereby to set selected gas cells to the binary one state by exceeding the firing potential of such cells, and

Claim 8

writing new information in said memory by applying a pulse to a selected Y line, applying pulses to selected X lines, said pulses being applied at a selected amplitude of said sinusoidal signal, thereby to set selected gas cells to the binary one state by exceeding the firing potential of such cells, and

Claim 9

sustaining or regenerating the stored informAtion by applying continuously a sinusoidal signal to all Y lines, said sinusoidal signal having a first amplitude greater than the sustain level at all times except during read operations, and

Claim 10

sustaining or regenerating the stored informAtion by applying continuously a sinusoidal signal to all Y lines, said sinusoidal signal having a first amplitude greater than the sustain level at all times except during read operations, and

Claim 11

applying pulses to a selected Y line and to selected X lines at a selected amplitude of said sinusoidal signal for setting associated gas cells to the binary one state by exceeding the firing potential of such cells, and

Claim 12

applying pulses to a selected Y line and to selected X lines at a selected amplitude of said sinusoidal signal for setting associated gas cells to the binary one state by exceeding the firing potential of such cells, and

Claim 13

applying to a selected Y line a pulse and to all Y lines a sinusoidal signal of a second amplitude below the sustain level, whereby the signal level on only the selected Y line exceeds the sustain level and simultaneously sensing all X lines for the presence of an electrical signal indicative of a binary one.

Claim 14

applying to a selected Y line a pulse and to all Y lines a sinusoidal signal of a second amplitude below the sustain level, whereby the signal level on only the selected Y line exceeds the sustain level and simultaneously sensing all X lines for the presence of an electrical signal indicative of a binary one.

Claim 15

performing read operations by reducing the inital amplitude of said first signal to an amplitude below said sustain level, applying a second signal to a selected Y line, said second signal having an amplitude and phase whereby the signal level on only the selected Y line exceeds said sustain level, and sensing X lines for the presence of an electrical signal identifying said binary information.

Claim 16

performing read operations by reducing the inital amplitude of said first signal to an amplitude below said sustain level, applying a second signal to a selected Y line, said second signal having an amplitude and phase whereby the signal level on only the selected Y line exceeds said sustain level, and sensing X lines for the presence of an electrical signal identifying said binary information.

Claim 17

performing read operations by reducing the amplitude of said sinusoidal signal to a second amplitude below the sustain level, applying a pulse to a selected Y line, said pulse having an amplitude and being applied at a selected phase of said sinusoidal signal whereby the signal level on only the selected Y line exceeds the sustain level, and simultaneously sensing each X line for the presence of an electrical signal representing a binary one.

Claim 18

performing read operations by reducing the amplitude of said sinusoidal signal to a second amplitude below the sustain level, applying a pulse to a selected Y line, said pulse having an amplitude and being applied at a selected phase of said sinusoidal signal whereby the signal level on only the selected Y line exceeds the sustain level, and simultaneously sensing each X line for the presence of an electrical signal representing a binary one.

Claim 19

A memory system including a plurality of gas cells located at coordinate intersections defined by a plurality of X lines and a plurality of Y lines disposed in an array, first means to apply a continuous sinusoidal signal of a first amplitude or a second amplitude to said Y lines, second means to apply a pulse to a selected Y line and third means to apply a pulse to selected X lines whereby gas cells which receive pulse signals from said first and second means and signals of the first amplitude from said third means are fired and set to the binary one state, fourth means including sense amplifier means selectively connected to said X lines which responds to signals on the X lines to indicate the storage state of interrogated gas cells, and fifth means to perform a read operation by operating said fourth means to connect the sense amplifier means to said X lines, said first means to apply a sinusoidal signal of the second amplitude to all Y lines, and said second means for aplying a pulse to a selected Y line, whereby the combined signal on only said selected Y line exceeds the sustain potential of gas cells on the selected Y line in the binary one state and a signal transfer takes place from the selected Y line through such cells in the binary one state to the associated X lines which is detected by said sense amplifier means.

Claim 20

A memory system including a plurality of gas cells located at coordinate intersections defined by a plurality of X lines and a plurality of Y lines disposed in an array, first means to apply a continuous sinusoidal signal of a first amplitude or a second amplitude to said Y lines, second means to apply a pulse to a selected Y line and third means to apply a pulse to selected X lines whereby gas cells which receive pulse signals from said first and second means and signals of the first amplitude from said third means are fired and set to the binary one state, fourth means including sense amplifier means selectively connected to said X lines which responds to signals on the X lines to indicate the storage state of interrogated gas cells, and fifth means to perform a read operation by operating said fourth means to connect the sense amplifier means to said X lines, said first means to apply a sinusoidal signal of the second amplitude to all Y lines, and said second means for aplying a pulse to a selected Y line, whereby the combined signal on only said selected Y line exceeds the sustain potential of gas cells on the selected Y line in the binary one state and a signal transfer takes place from the selected Y line through such cells in the binary one state to the associated X lines which is detected by said sense amplifier means.

Claim 21

performing a read operation by reducing the amplitude of said sinusoidal signal to a second amplitude below the sustain level and simultaneously applying a pulse to a selected Y line thereby to establish on only said selected Y line a signal level which exceeds the sustain level of the associated gas cells in the binary one state, and sensing simultaneously each X line for the presence of an electrical signal indicative of a binary one.

Claim 22

performing a read operation by reducing the amplitude of said sinusoidal signal to a second amplitude below the sustain level and simultaneously applying a pulse to a selected Y line thereby to establish on only said selected Y line a signal level which exceeds the sustain level of the associated gas cells in the binary one state, and sensing simultaneously each X line for the presence of an electrical signal indicative of a binary one.

Claim 23

performing erase operations by applying a pulse to a selected Y line and a pulse to each X line at a given amplitude of said sinusoidal signal thereby to erase or remove any stored binary ones.

Claim 24

performing erase operations by applying a pulse to a selected Y line and a pulse to each X line at a given amplitude of said sinusoidal signal thereby to erase or remove any stored binary ones.

Claim 25

performing erase operations by applying a pulse to a selected Y line and a pulse to each X line at a specified amplitude of said first signal thereby to erase or remove any stored binary data.

Claim 26

performing erase operations by applying a pulse to a selected Y line and a pulse to each X line at a specified amplitude of said first signal thereby to erase or remove any stored binary data.

Claim 27

A memory system including a plurality of gas cells at coordinate intersections of a matrix defined by a plurality of X lines and a plurality of Y lines, first means for applying a pulse to selected X lines representative of a binary one, second means for applying a pulse to a selected Y line, third means for applying a continuous sinusoidal signal of a first amplitude or a second amplitude to said Y lines, sense amplifier means connected to said X lines which is operated to indicate the state of interrogated gas cells, control means connected to said first means, second means, third means and sense amplifier means, program control means coupled to supply combinations of control signals to said control means for manipulating said control means to operate said memory system, said control means responding to one combination of signals from said program control means to write information in said memory system, said control means including fourth means which operates said first means to apply pulses to said X lines representative of binary ones, said control means including fifth means which operates said second means to apply a pulse to a selected Y line, and said control means including sixth means which operates said third means to apply a sinusoidal signal of said first amplitude to said Y lines, whereby the potential difference exceeds the firing potential across gas cells where binary ones are to be stored, and said control means responding to another combination of signals from said program control means to read information from said memory system, said control means including seventh means which operates said sense amplifier means, said sixth means operating said third means to apply a sinusoidal signal of a second amplitude to said Y lines, and said fifth means operating said second means to apply a pulse to a selected Y line, whereby the combined signal exceeds the sustain potential of gas cells on the selected Y line in the binary one state and causes a signal transfer from the selected Y line through such cells in the binary one state to the associated X lines to operate said sense amplifier means to represent binary ones.

Claim 28

A memory system including a plurality of gas cells at coordinate intersections of a matrix defined by a plurality of X lines and a plurality of Y lines, first means for applying a pulse to selected X lines representative of a binary one, second means for applying a pulse to a selected Y line, third means for applying a continuous sinusoidal signal of a first amplitude or a second amplitude to said Y lines, sense amplifier means connected to said X lines which is operated to indicate the state of interrogated gas cells, control means connected to said first means, second means, third means and sense amplifier means, program control means coupled to supply combinations of control signals to said control means for manipulating said control means to operate said memory system, said control means responding to one combination of signals from said program control means to write information in said memory system, said control means including fourth means which operates said first means to apply pulses to said X lines representative of binary ones, said control means including fifth means which operates said second means to apply a pulse to a selected Y line, and said control means including sixth means which operates said third means to apply a sinusoidal signal of said first amplitude to said Y lines, whereby the potential difference exceeds the firing potential across gas cells where binary ones are to be stored, and said control means responding to another combination of signals from said program control means to read information from said memory system, said control means including seventh means which operates said sense amplifier means, said sixth means operating said third means to apply a sinusoidal signal of a second amplitude to said Y lines, and said fifth means operating said second means to apply a pulse to a selected Y line, whereby the combined signal exceeds the sustain potential of gas cells on the selected Y line in the binary one state and causes a signal transfer from the selected Y line through such cells in the binary one state to the associated X lines to operate said sense amplifier means to represent binary ones.

Claim 29

A gas cell memory including a plurality of gas cells defined by a plurality of X lines disposed on one side of said gas cells and a plurality of Y lines disposed on the opposite side of said gas cells, first means coupled to said X lines and said Y lines for reading or extracting electronically information stored in said gas cell memory, said first means further including: second means for applying a first signal to a selected Y line, third means for applying a second signal having an amplitude less than the sustain level of said gas cells to all of said Y lines, and electrical sense means connected to said X lines, whereby (1) the potential difference established across the gas cells of said selected Y line by said second signal and said first signal exceeds said sustain level, (2) gas cells in the binary zero state do not ignite, (3) gas cells in the binary one state ignite and couple a signal from the selected Y line to the associated X lines, and (4) said sense means detects such signals on said X lines as representing binary ones and the absence of such signals On said X lines as representing binary zeros.

Claim 30

A gas cell memory including a plurality of gas cells defined by a plurality of X lines disposed on one side of said gas cells and a plurality of Y lines disposed on the opposite side of said gas cells, first means coupled to said X lines and said Y lines for reading or extracting electronically information stored in said gas cell memory, said first means further including: second means for applying a first signal to a selected Y line, third means for applying a second signal having an amplitude less than the sustain level of said gas cells to all of said Y lines, and electrical sense means connected to said X lines, whereby (1) the potential difference established across the gas cells of said selected Y line by said second signal and said first signal exceeds said sustain level, (2) gas cells in the binary zero state do not ignite, (3) gas cells in the binary one state ignite and couple a signal from the selected Y line to the associated X lines, and (4) said sense means detects such signals on said X lines as representing binary ones and the absence of such signals On said X lines as representing binary zeros.

Claim 33

The method of claim 6 including the further step of:

Claim 34

A gas cell memory including a plurality of gas cells, a plurality of X lines, and a plurality of Y lines disposed in a matrix array, first means coupled to said X lines and said Y lines for reading or extracting electronically information stored in said gas cell memory, said first means further including: second means for applying a pulse to a selected Y line, third means for applying a sinusoidal signal to said selected Y line, the amplitude of said sinusoidal signal being less than the sustain level of said gas cells, and fourth means connected to said X lines for detecting the presence or absence of electrical signals on each X line, whereby 1. the potential difference established across the gas cells of the selected Y line by the sinusoidal signal and the pulse exceeds the sustain level, 2. gas cells in the binary zero state do not ignite, 3. gas cell in the binary one state ignite and couple a signal from the selected Y line to the associated X lines, and 4. said fourth means detects such signals on the X lines as representing binary ones and the absence of such signals on the X lines as representing binary zeros.

Claim 35

A gas cell memory including a plurality of gas cells, a plurality of X lines, and a plurality of Y lines disposed in a matrix array, first means coupled to said X lines and said Y lines for reading or extracting electronically information stored in said gas cell memory, said first means further including: second means for applying a pulse to a selected Y line, third means for applying a sinusoidal signal to said selected Y line, the amplitude of said sinusoidal signal being less than the sustain level of said gas cells, and fourth means connected to said X lines for detecting the presence or absence of electrical signals on each X line, whereby 1. the potential difference established across the gas cells of the selected Y line by the sinusoidal signal and the pulse exceeds the sustain level, 2. gas cells in the binary zero state do not ignite, 3. gas cell in the binary one state ignite and couple a signal from the selected Y line to the associated X lines, and 4. said fourth means detects such signals on the X lines as representing binary ones and the absence of such signals on the X lines as representing binary zeros.

Claim 36

The method of claim 8 including the further step of repeating step (1) continuously until step (2) or step (3) is initiated.

Claim 39

The method of claim 10 further including the step of repeating step (1) continuously until step (2) or step (3) is initiated.

Claim 42

The method of claim 12 including the further step of:

Claim 43

The method of claim 13 including the further step of performing sustain operations at all times when read, erase, or write operations are not performed.

Claim 44

A memory system including a plurality of gas cells, said memory system including a container of illuminable gas, a plurality of X lines disposed on one side of said container, and a plurality of Y lines disposed on the other side of said container, said Y lines extending orthogonally to said X lines, first means for applying pulse signals to said X lines representative of binary ones, second means for applying a pulse to a selected Y line, third means for applying a continuous sinusoidal signal to said Y lines, said sinusoidal signal having a first amplitude or a second amplitude, sense means coupled to said Y lines for electrically sensing the state of interrogated gas cells, control means connected to said first means, second means, third means, and sense means, program control means coupled to supply combinations of control signals to said control means for manipulating said control means to perform write, sustain, read, and erase operations of said memory system, said control means responding to one combination of signals from said program control means to write information in said memory system, said control means including fourth means which operates said third means to apply a sinusoidal signal of said first amplitude to said Y lines, said control means including fifth means which operates said first means to supply pulses at a given phase of said sinusoidal signal to said X lines representative of binary ones, and said control means including sixth means which operates said second means to apply a pulse at a given phase of said sinusoidal signal to a selected Y line whereby the potential difference exceeds the firing potential across gas cells associated with said selected Y line whereby binary ones are to be stored, said control means responding to a second combination of signals from said program control means to perform a read operation, said control means including seventh means which operates said sense means to indicate the state of interrogated gas cells, said control means operating said third means to apply a sinusoidal signal of said second amplitude to said Y lines, and said control means operating said second means to apply a pulse at a given phase of said sinusoidal signal to a selected Y line, whereby the combined signal on the selected Y line exceeds the sustain potential of associated gas cells in the binary one state and causes a signal transfer from the selected Y line through such cells in the binary one state to the associated X lines which operates said sense means to indicate binary ones, said control means responding to a third combination of control signals from said program control means to perform a sustain operation by operating said third means to apply a sinusoidal signal of said first amplitude to said Y lines whereby all gas cells in the binary one state are regenerated by beIng ignited, and said control means responding to a fourth combination of signals from said program control means to perform an erase operation, said control means operating said first means to apply a pulse to each X line, said control means operating said second means to apply a pulse to a selected Y line, said control means operating said third means to apply a sinusoidal signal of said first amplitude to said Y lines, the pulses from said first and second means being applied at a given phase of said sinusoidal signal whereby the combined signal applied for a given duration is sufficiently small to reduce to the zero state all gas cells associated with the selected Y line. 16. The apparatus of claim 15 wherein the control means includes further means which automatically operates the control means to perform sustain operations whenever said program control means does not operate said control means to perform read, write or erase operations.

Claim 45

The apparatus of claim 15 wherein said sense means includes an amplifier connected to each X line, and additional control means is coupled to each amplifier for disabling each amplifier at all times except when a read operation is performed.