US3761310A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Material method of obtaining contact between electrode metal and semiconductor
Assignee: Individual
•
Filing: 1971-05-26
•
Granted: 1973-09-25
•
Expires: 1991-05-26
Abstract
Abstract A METHOD OF MAKING A CONTACT BETWEEN AN ELECTRODE METAL, SUCH AS GOLD OR SILVER, AND SILICON IN THE MANUFACTURE OF SEMICONDUTOR DEVICES, BY COATING THE SILICON SURFACE IWTH INTERMEDIATE THIN LAYERS OF AN ACTIVE METAL, SUCH AS TATANIUM, AND A CORROSION-RESISTANT METAL, SUCH AS NICKEL. THE SILICON SURFACE IS HELD AT A TEMPERATURE SUFFICIENT TO CAUSE THE TITANIUM TO REDUCE THE SILICON OXIDES ON THE SILICON SURFACE. THE TOTAL THICKNESS OF THE TITANIUM AND NICKEL LAYERS DOES NOT EXCEED 1,000 A. THE THUS METALLIZED SILICON IS THEN FUSED WITH THE ELECTRODE METAL (SILVER OR GOLD) AT A TEMPERATURE AT WHICH A EUTECTIC LIQUID PHASE IS FORMED.
Inventors
- 👤 K Preobrazhentsev
- 👤 V Shvarov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:13
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10P95/00
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-24 | 1977-03-26 | 1977-09-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-24 | 1981-03-26 | 1981-09-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-24 | 1985-03-26 | 1985-09-25 | $7700.00 | Window Closed / Lapsed |