Washed emitter method for improving passivation of a transistor
Abstract
Abstract AN IMPROVED METHOD FOR FABRICATING A TRANSISTOR BASED ON THE "WASHED EMITTER METHOD," WHEREIN AN ORIGINAL SILICON DIOXIDE FILM, USED AT A MASK FOR BASE DIFFUSION, IS REMOVED FROM THE SURFACE OF THE SILICON TRANSISTOR BODY AFTER A BASE REGION IS FORMED BY DIFFUSION AND A NEW INSULATION FILM WHICH OPERATIVELY ACTS TO STABILIZE THE SURFACE PROPERTY OF THE TRANSISTOR BODY IS SUBSTITUTED THEREFOR. EMITTER DIFFUSION IS THEN PROVIDED TO THE SURFACE OF THE BASE REGION BY UTILIZING THE NEW INSULATOR FILM AS A MASK FOR THE EMITTER DIFFUSION, AND THEREAFTER THE SURFACE OF THE BODY IS WASHED TO REMOVE THE OXIDE LAYER FORMED ON THE EMITTER REGION DURING THE EMITTER DIFFUSION. AN APERTURE FOR A BASE CONTACT IS THEN FORMED BY PHOTOETCHING A PART OF THE NEW INSULATOR FILM. A COMPLETED TRANSISTOR IS OBTAINED BY PROVIDING METAL CONTRACTS THROUGH THE RESPECTIVE APERTURES TO THE RESPECTIVE EMITTER AND BASE REGIONS.
Inventors
- 👤 T Mori
- 👤 H Higuchi
- 👤 K Uehara
Bibliographic Details
Claims Analysis
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