US3757176A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ed in the emitter pressure sensitive transistor having a schottky barrier junction form
Assignee: Panasonic Holdings Corp
•
Filing: 1971-09-29
•
Granted: 1973-09-04
•
Expires: 1991-09-29
Abstract
Abstract A pressure sensitive semiconductor device which has a schottky barrier junction at an electrode lead-out portion of one region of a p-n-p or n-p-n structure transistor and to which a pressure sensitive junction is formed by providing a pressure applying means to the schottky barrier junction which has a high sensitivity since it amplifies a pressure response signal by the amplifying action of the transistor.
Inventors
- 👤 G Kano
- 👤 H Kato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:20
CPC Classifications
H; H04; H04R; H04R23/00; H04R23/006; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/15
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
111 words
A pressure sensitive semiconductor transistor, comprising a body of a semiconductor material of one conductivity type; first and second regions formed in said semiconductor body, said first region being of a conductivity type opposite to said one type while said second region being of a conductivity type similar to said one type, said first and second regions being disposed in said semiconductor body to comprise, respectively, base and emitter regions of said transistor, the remaining portion of said body comprising the collector region; at least one metal electrode disposed on said emitter region to form a Schottky barrier junction therebetween; and means for applying a pressure to said Schottky barrier junction.
Claim 2
Dependent Claim
111 words
A pressure sensitive semiconductor transistor, comprising a body of a semiconductor material of one conductivity type; first and second regions formed in said semiconductor body, said first region being of a conductivity type opposite to said one type while said second region being of a conductivity type similar to said one type, said first and second regions being disposed in said semiconductor body to comprise, respectively, base and emitter regions of said transistor, the remaining portion of said body comprising the collector region; at least one metal electrode disposed on said emitter region to form a Schottky barrier junction therebetween; and means for applying a pressure to said Schottky barrier junction.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-03 | 1977-03-05 | 1977-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-03 | 1981-03-05 | 1981-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-03 | 1985-03-05 | 1985-09-04 | $7700.00 | Window Closed / Lapsed |