Abstract There is disclosed a method of manufacturing compound semiconductor devices under ambient pressure conditions. The process includes heating a source of dopant material selected from the group consisting of the II-VI compounds and III-V compounds together with a semiconductor substrate selected from the group consisting of III-V compounds and II-VI compounds to a predetermined temperature while passing an inert gas, preferably nitrogen, thereover. Thereafter forming gas (95 percent N2 - 5 percent H2) is passed over the source material and the substrate to effect reduction of the source material; a deposition of dopant ions on the semiconductor substrate; and diffusion of the dopant ions therein. In accordance with preferred embodiment of the invention linc oxide is used as the source material for substrates of GaAs, GaAsXP1 X and GaP. The process permits the use of a single temperature operation for deposition and diffusion. The donor ions present in the source material do not diffuse readily enough into the compound semiconductor substrates to affect the doping concentration provided by the acceptor ions.
A method of manufacturing compound semiconductor devices as recited in claim 1 wherein said substrate is of a material selected from the group consisting of gallium arsenide, gallium arsenide phosphide, and gallium phosphide and the dopant source of a compound selected from the group of compounds consisting of zinc and cadmium with oxygen, sulphur, selenium, and tellurium.
Claim 2
Dependent Claim
22 words
A method of manufacturing compound semiconductor devices as recited in claim 2 wherein said predetermined temperature is between 650* and 750* C.
Claim 3
Dependent Claim
20 words
A method of manufacturing compound semiconductor devices as recited in claim 3 wherein said predetermined temperature is approximately 710* C.
Claim 4
Dependent Claim
39 words
A method of manufacturing compound semiconductor devices as recited in claim 2 wherein said step of preheating is continued for approximately 30 minutes and the step of passing forming gas over the material is continued for approximately 3 hours.
Claim 5
Dependent Claim
26 words
A method of manufacturing compound semiconductor devices as recited in claim 2 wherein said substrate is gallium arsenide phosphide and the dopant source is zinc oxide.