US3753055A
Expired / Lapsed
US
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Field effect semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1971-12-28
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Granted: 1973-08-14
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Expires: 1991-12-28
Abstract
Abstract A field effect semiconductor switching device of high breakdown voltage and large current capacity having negative resistance characteristics which are controllable by an electric field.
Inventors
- 👤 A Yamashita
- 👤 T Fujita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:16
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/80; H10D18/251; H10D18/40; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/142
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
196 words
A field effect semiconductor device comprising, in combination, a semiconductor substrate of one conductivity type having two principal surfaces, first and second regions formed in one surface of said semiconductor substrate and having a conductivity type opposite to that of said semiconductor substrate, a third region of said opposite conductivity type formed in the other surface opposite to said one surface of said semiconductor substrate, a single fourth region of said one conductivity type formed in said second region, an insulating layer formed on said one surface at least between said first and second regions, first and second electrodes connected to said first and fourth regions respectively, a first gate electrode on said insulating layer, a second gate electrode connected on said third region, and means for shorting said first electrode and said second gate electrode, the current flowing between said first and second electrodes being on-off controlled by the bias voltage applied to the first gate electrode by shorting of the first electrode and the second gate electrode, the reverse breakdown voltage being supported by the two pn junctions between the semiconductor substrate and the third region and between the fourth and the second region.
Claim 2
Dependent Claim
196 words
A field effect semiconductor device comprising, in combination, a semiconductor substrate of one conductivity type having two principal surfaces, first and second regions formed in one surface of said semiconductor substrate and having a conductivity type opposite to that of said semiconductor substrate, a third region of said opposite conductivity type formed in the other surface opposite to said one surface of said semiconductor substrate, a single fourth region of said one conductivity type formed in said second region, an insulating layer formed on said one surface at least between said first and second regions, first and second electrodes connected to said first and fourth regions respectively, a first gate electrode on said insulating layer, a second gate electrode connected on said third region, and means for shorting said first electrode and said second gate electrode, the current flowing between said first and second electrodes being on-off controlled by the bias voltage applied to the first gate electrode by shorting of the first electrode and the second gate electrode, the reverse breakdown voltage being supported by the two pn junctions between the semiconductor substrate and the third region and between the fourth and the second region.
Claim 3
Dependent Claim
183 words
A field effect semiconductor device comprising, in combination, a semiconductor substrate of one conductivity type having two principal surfaces, first and second regions formed in one surface of said semiconductor substrate and having a conductivity type opposite to that of said semiconductor substrate, a third region of said opposite conductivity type formed in the other surface opposite to said one surface of said semiconductor substrate, a single fourth region of said one conductivity type formed in said second region, a single fifth regiOn of said one conductivity type formed in said first region, an insulating layer formed on said one surface at least between said first and second regions, first and second electrodes connected to said fifth and fourth regions respectively, a first gate electrode on said insulating layer, a second gate electrode connected on said third region, and means for shorting said first electrode and said second gate electrode, the current flowing between said first and second electrodes being on-off controlled by the bias voltage applied to the first gate electrode by shorting of the first electrode and the second gate electrode.
Claim 4
Dependent Claim
183 words
A field effect semiconductor device comprising, in combination, a semiconductor substrate of one conductivity type having two principal surfaces, first and second regions formed in one surface of said semiconductor substrate and having a conductivity type opposite to that of said semiconductor substrate, a third region of said opposite conductivity type formed in the other surface opposite to said one surface of said semiconductor substrate, a single fourth region of said one conductivity type formed in said second region, a single fifth regiOn of said one conductivity type formed in said first region, an insulating layer formed on said one surface at least between said first and second regions, first and second electrodes connected to said fifth and fourth regions respectively, a first gate electrode on said insulating layer, a second gate electrode connected on said third region, and means for shorting said first electrode and said second gate electrode, the current flowing between said first and second electrodes being on-off controlled by the bias voltage applied to the first gate electrode by shorting of the first electrode and the second gate electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-13 | 1977-02-12 | 1977-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-13 | 1981-02-12 | 1981-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-13 | 1985-02-12 | 1985-08-14 | $7700.00 | Window Closed / Lapsed |