US3752714A
Expired / Lapsed
US
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Method for selective epitaxial deposition of intermetallic semiconductor compounds
Assignee: Hitachi Ltd
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Filing: 1970-07-31
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Granted: 1973-08-14
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Expires: 1990-07-31
Abstract
Abstract A METHOD OF SELECTIVE EPITAXIAL DEPOSITION OF INTERMETALLIC SEMICONDUCTOR COMPOUNDS HAVING A ZINC BLENDE TYPE CRYSTALLINE STRUCTURE, SUCH AS GALLIUM ARSENIDE, IN REACTANGULAR HOLES ETCHED INTO (100) ORIENTED SUBSTRATES OF SAME MATERIAL AS THE DEPOSITED COMPOUND. THE HOLES ARE ORIENTED IN THE <100> TO <310> DIRECTIONS, SO AS TO OBTAINED HOLE WALLS, WHICH ARE SUBSTANTIALLY PERPENDICULAR WITH RESPECT TO THE UPPER SURFACE OF SUBSTRATE, AND WHICH RESULT IN THE FORMATION OF FLAT UPPER SURFACES OF SNGLE CRYSTALS DEPOSITED IN THOSE HOLES. THE HOLES ARE ETCHED WITH A H2SO4:H2O2 (1:10 BY VOLUME) SOLUTION.
Inventors
- 👤 K Ito
- 👤 S Iida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:32
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/646; H10P50/648; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/051; Y10S148/056; Y10S148/115
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-13 | 1977-02-12 | 1977-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-13 | 1981-02-12 | 1981-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-13 | 1985-02-12 | 1985-08-14 | $7700.00 | Window Closed / Lapsed |