US3751306A
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Semiconductor element
Assignee: Siemens AG
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Filing: 1969-12-03
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Granted: 1973-08-07
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Expires: 1989-12-03
Abstract
Abstract A semiconductor element with a semiconductor body with pnjunction at the surface. At least the pn-junction is provided with an insulating layer. The insulating coating contains bivalent lead ions, and an additive whereby an oxide coat at the surface of the semiconductor body becomes permeable to bivalent lead ions. The additive contains fluorine ions or phosphate ions.
Inventors
- 👤 N Schink
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 02:08
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/40; H10W74/47; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
16 words
The semiconductor element of claim 1, wherein the insulating material contains an additive of fluorine ions.
Claim 2
Dependent Claim
24 words
The semiconductor element of claim 1, wherein the additive in the insulating substance is a polyhydroxy compound with at least two adjacent hydroxyl groups.
Claim 3
Dependent Claim
16 words
The semiconductor element of claiM 1, wherein the additive in the insulating material is phosphate ions.
Claim 4
Dependent Claim
19 words
The semiconductor element of claim 1, wherein the insulating material containing the additive consists of a lacquer or caoutchouc.
Claim 5
Dependent Claim
30 words
The semiconductor element of claim 1, wherein especially the surface of that part of the semiconductor body which contains the p-conducting zone is provided with a coating of insulating material.
Claim 6
Dependent Claim
24 words
The semiconductor element of claim 1, wherein the bivalent lead ion content in the insulating material is from 0.0001 to 30 percent by weight.
Claim 7
Dependent Claim
22 words
The semiconductor element of claim 1, wherein the insulating substance contains at least one of minium, lead carbonate, and yellow lead oxide.
Claim 8
Dependent Claim
29 words
The semiconductor element of claim 8, wherein the amount of minium, lead carbonate and yellow lead oxide in the insulating material is between 0.1 and 30 percent by weight.
Claim 9
Dependent Claim
18 words
The semiconductor element of claim 1, wherein the insulating substance contains the lead salt of a carboxylic acid.
Claim 10
Dependent Claim
22 words
The semiconductor element of claim 10, wherein the insulating substance contains at least one of lead stearate, lead acetate, and lead naphthenate.
Claim 11
Dependent Claim
29 words
The semiconductor element of claim 11, wherein the amount of lead stearate, lead acetate, and lead naphthenate in the insulating material is between 0.002 and 5 percent by weight.
Claim 12
Dependent Claim
24 words
The semiconductor element of claim 1, wherein the insulating substance contains ions selected from the group consisting of alkaline, alkaline earth and earth metal.
Claim 13
Dependent Claim
29 words
The semiconductor element of claim 13, wherein the amount of alkaline, alkaline earth and earth metal ions in the insulating material is between 0.1 and 20 percent by weight.
Claim 14
Dependent Claim
23 words
The semiconductor element of claim 13, wherein the insulating substance contains an alkaline, alkaline earth or earth metal salt of a carboxylic acid.
Claim 15
Dependent Claim
24 words
The semiconductor element of claim 15, wherein the insulating substance contains at least one of sodium stearate, magnesium stearate, calcium stearate and aluminum stearate.
Claim 16
Dependent Claim
31 words
The semiconductor element of claim 16, wherein the amount of the sodium stearate, magnesium stearate, calcium and aluminum stearate in the insulating substance is between 0.1 and 6 percent by weight.
Claim 17
Dependent Claim
13 words
The semiconductor element of claim 1, wherein the insulating substance contains stearic acid.
Claim 18
Dependent Claim
20 words
The semiconductor element of claim 18, wherein the insulating substance contains 0.1 to 3 percent by weight of stearic acid.
Claim 19
Dependent Claim
23 words
The semiconductor element of claim 2, wherein the fluorine ion content in the insulating coat is from 0.001 to 3 percent by weight.
Claim 20
Dependent Claim
24 words
The semiconductor element of claim 2, wherein the insulating substance contains at least one of ammonium fluoride, and a fluoride of an organic amine.
Claim 21
Dependent Claim
26 words
The semiconductor element of claim 21, wherein the amount of ammonium fluoride and fluorides of an organic amine is between 0.0002 and 0.2 percent by weight.
Claim 22
Dependent Claim
13 words
The semiconductor element of claim 2, wherein the insulating substance contains lead fluoride.
Claim 23
Dependent Claim
17 words
The semiconductor element of claim 23, wherein the insulating material contains 0.001 to 30 percent lead fluoride.
Claim 24
Dependent Claim
21 words
The semiconductor element of claim 2, wherein the insulating substance contains the fluoride of an alkaline, alkaline earth or earth metal.
Claim 25
Dependent Claim
31 words
The semiconductor element of claim 25, wherein the total amount of fluoride of an alkaline metal, alkaline earth metal, and an earth metal is between 0.0002 and 15 percent by weight.
Claim 26
Dependent Claim
21 words
The semiconductor element of claim 3, wherein the polyhydroxy compound is alizarin, a derivative of alizarin or a chemical compound thereof.
Claim 27
Dependent Claim
24 words
The semiconductor element of claim 27 wherein the content of alizarin of the insulating material coating is from 0.1 to 30 percent by weight.
Claim 28
Dependent Claim
13 words
The semiconductor element of claim 27, wherein the insulating substance contains lead alizArinate.
Claim 29
Dependent Claim
23 words
The semiconductor element of claim 29, wherein the amount of lead alizarinate is in the range between 0.0002 and 2 percent by weight.
Claim 30
Dependent Claim
17 words
The semiconductor element of claim 3, wherein the polyhydroxy compound is mannitol, sorbital, quercitin and derivatives thereof.
Claim 31
Dependent Claim
13 words
The semiconductor element of claim 31, wherein the insulating layer contains lead quercinate.
Claim 32
Dependent Claim
23 words
The semiconductor element of claim 3, wherein the polyhydroxy compound content of the insulating material is between 0.05 and 30 percent by weight.
Claim 33
Independent Claim
75 words
A method for preparation of a coat of insulating substance on the semiconductor body of a semiconductor element with a pn-junction emerging at the surface and coated with an oxide layer which comprises adding to the insulating substance in liquid or plastic phase toluene, xylene, cyclohexanone and/or cyclohexanol, in which a bivalent lead ions donating substances is dissolved, whereby the oxide coat at the surface of the semiconductor body, becomes permeable for bivalent lead ions.
Claim 34
Dependent Claim
30 words
The method of claim 34, wherein to the insulating substance are added toluene, xylene, cylohexanone, and/or cyclohexanol, in which alkaline, alkaline earth and/or earth metal ion donating substances are dissolved.
Claim 35
Dependent Claim
23 words
The method of claim 35, wherein the semiconductor body, after application of the insulating substance is heated for hardening of the insulating substance.
Claim 36
Independent Claim
65 words
The method for stabilization of the characteristics of the semiconductor element with a semiconductor body, which exhibits at the surface appearing pn-junction which comprises treating the surface of the semiconductor body before application of an insulating coat with a medium which contains bivalent lead ions and an additive, whereby the oxide coat at the surface of the semiconductor body becomes permeable for bivalent lead ions.
Claim 37
Dependent Claim
30 words
The method of claim 37, wherein an etching fluid which contains 0.001 to 1,000 mg bivalent lead ions per liter of liquid is used for dissolution of the oxide coat.
Claim 38
Dependent Claim
33 words
The method of claim 37, wherein a gas, preferably vapor of aqueous hydrofluoric acid solution or alizarin vapor, is used to dissolve the oxide coat present at the surface of the semiconductor body.
Claim 39
Dependent Claim
24 words
The method of claim 37, wherein a rinsing liquid which contains 0.001 to 1,000 mg bivalent lead ions per liter of liquid is used.
Claim 40
Dependent Claim
15 words
The method of claim 37, wherein water, and/or alcohol is used as the rinsing liquid.
Claim 41
Dependent Claim
24 words
The method of claim 41, wherein water, and/or alcohol with an addition of bivalent lead carboxylic acid salt is used as the rinsing liquid.
Claim 42
Dependent Claim
21 words
The method of claim 41, wherein water, and/or alcohol with an addition of lead nitrate is used as the rinsing liquid.
Claim 43
Dependent Claim
16 words
The method of claim 43, wherein the rinsing liquid contains 0.002 to 2,000 mg lead salt.
References Cited (Backward Citations)
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Cited
US3316465A
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US3447237A
Cited
US3447975A
Cited
US3460003A
Cited
US3506502A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-06 | 1977-02-05 | 1977-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-06 | 1981-02-05 | 1981-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-06 | 1985-02-05 | 1985-08-07 | $7700.00 | Window Closed / Lapsed |