US3749984A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electroacoustic semiconductor device employing an igfet
Assignee: RCA Corp
•
Filing: 1969-04-11
•
Granted: 1973-07-31
•
Expires: 1989-04-11
Abstract
Abstract An electroacoustic semiconductor device, comprising a directcoupled piezoelectric transducer with interdigitated electrodes, and an insulated gate field-effect transistor fabricated on a layer of semiconductor material having a surface insulating coating, a part of which serves as the gate insulator of the transistor. An input signal applied to the interdigitated electrodes causes the transducer to launch a surface acoustic wave along the insulating coating, with a resultant change in gate electrode insulator thickness, thus controlling current flow between source and drain electrodes.
Inventors
- 👤 C Benyon
- 👤 D Liebowitz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 03:09
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/05; H03H9/0538; H03H9/0542; H03H11/00; H03H11/02; H03H11/24; H03H9/02535; H03H9/02637; H03H9/02779; H03H9/02787; H03H9/0296; H03H9/02976; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
94 words
A semiconductor device comprising: a layer of semiconductor material having a continuous insulating coating disposed on a surface thereof, at least one insulated gate field-effect transistor formed within said layer, in which the gate insulation of said transistor comprises a portion of said coating, and means mounted on said coating for launching a surface acoustic wave along said coating, said last named means comprising at least one pair of interdigitated electrodes disposed on the continuous surface insulating coating and a film of piezoelectric material disposed over, and contiguous with, said electrodes and said coating.
Claim 2
Dependent Claim
94 words
A semiconductor device comprising: a layer of semiconductor material having a continuous insulating coating disposed on a surface thereof, at least one insulated gate field-effect transistor formed within said layer, in which the gate insulation of said transistor comprises a portion of said coating, and means mounted on said coating for launching a surface acoustic wave along said coating, said last named means comprising at least one pair of interdigitated electrodes disposed on the continuous surface insulating coating and a film of piezoelectric material disposed over, and contiguous with, said electrodes and said coating.
Claim 3
Dependent Claim
19 words
A device according to claim 1, in which said electrodes comprise gold disposed over a thin layer of chromium.
Claim 4
Dependent Claim
12 words
A device according to claim 1, in which said electrodes comprise aluminum.
Claim 5
Dependent Claim
12 words
A device according to claim 1, in which said electrodes comprise tungsten.
Claim 6
Dependent Claim
14 words
A device according to claim 1, in which said piezoelectric material comprises cadmium sulfide.
Claim 7
Dependent Claim
76 words
A semiconductor device comprising: a layer of semiconductor material having a continuous insulating coating disposed on a major surface thereof, an insulated gate field-effect transistor formed within said layer, in which the gate insulation of said transistor comprises a portion of said coating, first means mounted on said coating for launching a first surface acoustic wave along said coating, and second means mounted on said coating for launching a second surface acoustic wave along said coating.
Claim 8
Dependent Claim
76 words
A semiconductor device comprising: a layer of semiconductor material having a continuous insulating coating disposed on a major surface thereof, an insulated gate field-effect transistor formed within said layer, in which the gate insulation of said transistor comprises a portion of said coating, first means mounted on said coating for launching a first surface acoustic wave along said coating, and second means mounted on said coating for launching a second surface acoustic wave along said coating.
Claim 9
Dependent Claim
111 words
A electroacoustic semiconductor tuner for a television receiver, comprising: a layer of semiconductor material having a continuous insulating coating disposed on a surface thereof; an insulated gate field-effect transistor formed within said layer, in which the gate insulation of said transistor comprises a portion of said coating; first means mounted on said coating for launching a first surface acoustic wave along said insulating coating, said means operating only upon application of the transmission frequency of a desired television channel; and second means mounted on said coating for launching a second surface acoustic wave along said coating, said means operating only upon application of the local oscillator frequency of said television receiver.
Claim 10
Dependent Claim
111 words
A electroacoustic semiconductor tuner for a television receiver, comprising: a layer of semiconductor material having a continuous insulating coating disposed on a surface thereof; an insulated gate field-effect transistor formed within said layer, in which the gate insulation of said transistor comprises a portion of said coating; first means mounted on said coating for launching a first surface acoustic wave along said insulating coating, said means operating only upon application of the transmission frequency of a desired television channel; and second means mounted on said coating for launching a second surface acoustic wave along said coating, said means operating only upon application of the local oscillator frequency of said television receiver.
References Cited (Backward Citations)
US3329023A
Cited
US3360749A
Cited
US3413573A
Cited
US3479572A
Cited
US3473032A
Cited
US3486046A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-30 | 1977-01-29 | 1977-07-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-30 | 1981-01-29 | 1981-07-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-30 | 1985-01-29 | 1985-07-31 | $7700.00 | Window Closed / Lapsed |