Thin film nickel temperature sensor
Abstract
Abstract THIN FILM NICKEL TEMPERATURE SENSORS HAVING A TEMPERATURE COEFFICIENT OF RESISTANCE OF ABOUT +0.2%/*C. AND A RESISTANCE ABOVE 0.35 OHM PER SQUARE ARE FORMED BY ELECTRON BEAM EVAPORATION OF A HIGH PURITY NICKEL SOURCE AT PRESSURE BELOW 8X10-6 TORR AND DEPOSITION OF THE EVAPORATED NICKEL ATOP A DIELECTRIC SUBSTRATE, E.G. A POLYIMIDE FILM, HEATED ABOVE 60*C. THE NICKEL FILM PREFERABLY IS DEPOSITED TO A THICKNESS BETWEEN 250 A. AND 3000 A. AND MASKING IS EMPOLYED TO PRODUCE A DESIRED CONFIGURATION IN THE DEPOSITED NICKEL FILM. TO STABILIZE THE RESISTANCE OF THE DEPOSITED NICKEL FILM, A DIELECTRIC ENCAPSULANT SUCH AS ALUMINA, SILICA, A POLYIMIDE OR A FLUOROCARBON THEN IS OVERLAYED UPON THE FILM BY CONVENTIONAL VACUUM DEPOSITION OR BONDING TECHNIQUES.
Inventors
- 👤 A Chen
- 👤 J Lommel
Bibliographic Details
Claims Analysis
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