US3746945A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Schottky diode clipper device
Assignee: Motorola Solutions Inc
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Filing: 1971-10-27
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Granted: 1973-07-17
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Expires: 1991-10-27
Abstract
Abstract A pair of Schottky barrier diodes formed on a single substrate of semiconductor material so that they are connected in a parallel opposed relationship and a lead may be attached to each side thereof in axially outwardly extending relationship.
Inventors
- 👤 P Normington
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:29
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/201; H10D84/204; H10D84/221; H10D99/00; Y; Y10; Y10S; Y10S257/00; Y10S257/909
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
177 words
An improved diode clipper device comprising: a. a substrate layer of semiconductor material having two opposed major surfaces; b. said substrate layer being divided into first, second and third sections each having first and second opposed surfaces cooperating to define the two opposed major surfaces of said substrate layer, said first and third sections being separated by said second section, and said first and third setions having an impurity therein for providing conductivity of a first type and said second section having an impurity therein for providing conductivity of a second type; c. a first type of metal deposited on the first surface of said first section and the second surface of said third section for forming two Schottky barrier diodes; and d. a second type of metal deposited on said first type of metal, the second surface of said first section and the first surface of said third section for providing ohmic connection with said first type of metal and said first and third section to connect said Schottky barrier diodes in a parallel opposed relationship.
Claim 2
Dependent Claim
177 words
An improved diode clipper device comprising: a. a substrate layer of semiconductor material having two opposed major surfaces; b. said substrate layer being divided into first, second and third sections each having first and second opposed surfaces cooperating to define the two opposed major surfaces of said substrate layer, said first and third sections being separated by said second section, and said first and third setions having an impurity therein for providing conductivity of a first type and said second section having an impurity therein for providing conductivity of a second type; c. a first type of metal deposited on the first surface of said first section and the second surface of said third section for forming two Schottky barrier diodes; and d. a second type of metal deposited on said first type of metal, the second surface of said first section and the first surface of said third section for providing ohmic connection with said first type of metal and said first and third section to connect said Schottky barrier diodes in a parallel opposed relationship.
Claim 3
Dependent Claim
42 words
An improved diode clipper device as set forth in claim 1 including in addition layers of insulating material overlying the first and second surfaces of the second section and portions of the first and second surfaces of the first and third sections.
Claim 4
Dependent Claim
19 words
An improved diode clipper device as set forth in claim 1 wherein the first type of metal includes chromium.
Claim 5
Dependent Claim
19 words
An improved diode clipper device as set forth in claim 1 wherein the second type of metal includes gold.
Claim 6
Dependent Claim
67 words
An improved diode clipper device as set forth in claim 1 wherein each of said first and second sections includes a layer of semiconductor material having a relatively low concentration of impurities therein underlying and electrically engaged with the first type of metal and a layer of semiconductor material having a relatively high concentration of impurities therein underlying and electrically engaged with the second type of metal.
Claim 7
Dependent Claim
32 words
An improved diode clipper device as set forth in claim 1 wherein the first and third sections of the substrate layer are N type conductivity and the second section is P type.
Claim 8
Independent Claim
148 words
A method of producing an improved diode clipper device including the steps of: a. providing a substrate layer of semiconductor material having two opposed surfaces; b. introducing impurities into said layer to form said layer into first, second, and third sections, each having first and second opposed surfaces cooperative to define the two opposed major surfaces of said substrate layer, said first and third sections being separated by said second section and said first and third sections having a first type of conductivity and said second section having a second type of conductivity; c. depositing barrier metal on the first surface of the first section and the second surface of the third section to form Schottky barrier diodes at opposed surfaces of said substrate layer; and depositing connecting metal on the opposed major surfaces of said substrate layer to connect the Schottky barrier diodes in opposed parallel relationship.
Claim 9
Independent Claim
148 words
A method of producing an improved diode clipper device including the steps of: a. providing a substrate layer of semiconductor material having two opposed surfaces; b. introducing impurities into said layer to form said layer into first, second, and third sections, each having first and second opposed surfaces cooperative to define the two opposed major surfaces of said substrate layer, said first and third sections being separated by said second section and said first and third sections having a first type of conductivity and said second section having a second type of conductivity; c. depositing barrier metal on the first surface of the first section and the second surface of the third section to form Schottky barrier diodes at opposed surfaces of said substrate layer; and depositing connecting metal on the opposed major surfaces of said substrate layer to connect the Schottky barrier diodes in opposed parallel relationship.
References Cited (Backward Citations)
US3117260A
Cited
US3579278A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-16 | 1977-01-15 | 1977-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-16 | 1981-01-15 | 1981-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-16 | 1985-01-15 | 1985-07-17 | $7700.00 | Window Closed / Lapsed |