US3742318A
Expired / Lapsed
US
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Field effect semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1971-11-24
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Granted: 1973-06-26
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Expires: 1991-11-24
Abstract
Abstract A field-effect semiconductor device having negative resistance characteristics which are controllable by means of an electric field. The device may serve as a solid-state switch.
Inventors
- 👤 A Yamashita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 03:18
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/72; H10; H10D; H10D18/00; H10D18/40; H10D84/00; H10D84/40; H10D84/401; H10D84/403; H10D84/406; H10D99/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
139 words
A field-effect semiconductor device comprising a semiconductor substrate of one conductivity type, first and second regions formed in one surface of said semiconductor substrate and having a conductivity type opposite to that of said semiconductor substrate, a third region formed in one of said first and second regions and having said one conductivity type, first and second electrodes connected to said first and third regions respectively, a first gate electrode provided between said first and second regions through an insulating layer, a second gate electrode formed on the opposite surface of the semiconductor substrate, and means for shorting said first electrode and said second gate electrode, the current flowing between said first and second electrodes being on-off controlled by the bias voltage applied to the first gate electrode by shorting of the first electrode and the second gate electrode.
Claim 2
Dependent Claim
139 words
A field-effect semiconductor device comprising a semiconductor substrate of one conductivity type, first and second regions formed in one surface of said semiconductor substrate and having a conductivity type opposite to that of said semiconductor substrate, a third region formed in one of said first and second regions and having said one conductivity type, first and second electrodes connected to said first and third regions respectively, a first gate electrode provided between said first and second regions through an insulating layer, a second gate electrode formed on the opposite surface of the semiconductor substrate, and means for shorting said first electrode and said second gate electrode, the current flowing between said first and second electrodes being on-off controlled by the bias voltage applied to the first gate electrode by shorting of the first electrode and the second gate electrode.
Claim 3
Dependent Claim
42 words
A field-effect semiconductor device according to claim 1, comprising a fourth region formed in the other of said first And second regions and having a conductivity type opposite to that of said other region, and an electrode connected to said fourth region.
Claim 4
Dependent Claim
22 words
A non-contact switch comprising a field-effect semiconductor device according to claim 1 and a Hall effect device connected to said gate electrode.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-25 | 1976-12-25 | 1977-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-25 | 1980-12-25 | 1981-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-25 | 1984-12-25 | 1985-06-26 | $7700.00 | Window Closed / Lapsed |