US3742215A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for a semiconductor radiation detector
Assignee: US Philips Corp
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Filing: 1971-01-22
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Granted: 1973-06-26
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Expires: 1991-01-22
Abstract
Abstract Semiconductor nuclear detector and method of manufacturing the same, the detector comprising a semiconductor crystal having two outer regions of opposite conductivity types and separated by an intermediate, intrinsic region and each having a recess; these recesses are located opposite each other and have substantially similar configurations. One recess serves as an entrance window for the radiation and has a depth at least equal to the thickness of the outer region concerned, whereas contacts are made at the peripheries of said outer regions. The depth of the recess opposite that serving as an entrance window for the radiation is at least equal to the thickness of the outer region in which it is provided.
Inventors
- 👤 J Meuleman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:23
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/29; H10F30/292; H10F30/2925; Y; Y10; Y10S; Y10S257/00; Y10S257/909
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
132 words
A nuclear detector comprising a semiconductor crystal in which a first and a second outer region of opposite conductivity types are present, an intermediate substantially intrinsic region is disposed bEtween said first and second outer regions, said first outer region includes a recess, which serves as an entrance window for the radiation and which has a depth at least equal to the thickness of said first outer region, contacts are connected to the second outer region and the peripheral portion of the first outer region, and said second outer region includes a recess located opposite that serving as an entrance window for the radiation and having a substantially identical configuration, the depth of said recess of the second outer region being at least equal to the thickness of said second outer region.
Claim 2
Dependent Claim
132 words
A nuclear detector comprising a semiconductor crystal in which a first and a second outer region of opposite conductivity types are present, an intermediate substantially intrinsic region is disposed bEtween said first and second outer regions, said first outer region includes a recess, which serves as an entrance window for the radiation and which has a depth at least equal to the thickness of said first outer region, contacts are connected to the second outer region and the peripheral portion of the first outer region, and said second outer region includes a recess located opposite that serving as an entrance window for the radiation and having a substantially identical configuration, the depth of said recess of the second outer region being at least equal to the thickness of said second outer region.
Claim 3
Dependent Claim
14 words
A detector as claimed in claim 1 characterized in that the recesses are cylindrical.
Claim 4
Dependent Claim
18 words
A detector as claimed in claim 1 characterized in that the recesses have the shape of a parallelopiped.
Claim 5
Dependent Claim
45 words
A detector as claimed in claim 1, characterized in that a plurality of said detectors are stacked up so that their intermediate regions are parallel to each other and the n-type region of one detector is located opposite a p-type region of the adjacent detector.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-25 | 1976-12-25 | 1977-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-25 | 1980-12-25 | 1981-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-25 | 1984-12-25 | 1985-06-26 | $7700.00 | Window Closed / Lapsed |