US3739353A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical-access memory device for non-destructive reading
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1972-05-09
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Granted: 1973-06-12
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Expires: 1992-05-09
Abstract
Abstract The memory device permits storage of a high density of information in binary form and comprises a p or n-type semiconductor substrate having a forbidden band Eg and two intermediate levels, the lower level being located at an energy Ep from the top of the valence band and the upper level at an energy Ee from the bottom of the conduction band, an array of memory cores distributed over the surface of the substrate, writing means for selectively populating the two intermediate core levels with majority carriers from the valence band, optical means for selectively illuminating the memory cores with photons of energy greater than the energy Ei between the two intermediate levels, means for detecting the reaction of each memory core when this latter is illuminated by the optical means.
Inventors
- 👤 G Bjorklund
- 👤 J Borel
- 👤 J Marine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:43
CPC Classifications
H; H10; H10F; H10F99/00; H10B; H10B69/00; G; G11; G11C; G11C13/00; G11C13/04; G11C13/048
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
140 words
A memory device comprising a p or n-type semi-conductor substrate having a forbidden band Eg and two intermediate levels, the lower level being located at an energy Ep from the top of the valence band and the upper level at an energy Ee from the bottom of the conduction band; an array of diodes distributed over the surface of said substrate; electrical writing means comprising an electric circuit to selectively bias each diode in the forward direction to selectively populate the lower of the two intermediate levels with majority carriers from the valence band; an optical source associated with light deflectors in front of said substrate for selectively illuminating the diodes with a light beam whose photons have an energy of higher value than the energy Ei which separates the two intermediate levels; and optical detectors placed behind said substrate.
Claim 2
Dependent Claim
140 words
A memory device comprising a p or n-type semi-conductor substrate having a forbidden band Eg and two intermediate levels, the lower level being located at an energy Ep from the top of the valence band and the upper level at an energy Ee from the bottom of the conduction band; an array of diodes distributed over the surface of said substrate; electrical writing means comprising an electric circuit to selectively bias each diode in the forward direction to selectively populate the lower of the two intermediate levels with majority carriers from the valence band; an optical source associated with light deflectors in front of said substrate for selectively illuminating the diodes with a light beam whose photons have an energy of higher value than the energy Ei which separates the two intermediate levels; and optical detectors placed behind said substrate.
Claim 3
Dependent Claim
144 words
A memory device comprising a p or n-type semi-conductor substrate having a forbidden band Eg and two intermediate levels, the lower level being located at an energy Ep from the top of the valence band and the upper level at an energy Ee from the bottom of the conduction band; a first optical source associated with light deflectors in front of said substrate for selectively illuminating a plurality of points of said substrate with photons of energy greater than Ep for selectively populating the lower of the two intermediate levels with majority carriers from the valence band; a second optical source associated with light deflectors, in front of said substrate for selectively illuminating said points with a light beam whose photons have an energy of higher value than the energy Ei which separates the two intermediate levels; and optical detectors placed behind said substrate.
Claim 4
Dependent Claim
144 words
A memory device comprising a p or n-type semi-conductor substrate having a forbidden band Eg and two intermediate levels, the lower level being located at an energy Ep from the top of the valence band and the upper level at an energy Ee from the bottom of the conduction band; a first optical source associated with light deflectors in front of said substrate for selectively illuminating a plurality of points of said substrate with photons of energy greater than Ep for selectively populating the lower of the two intermediate levels with majority carriers from the valence band; a second optical source associated with light deflectors, in front of said substrate for selectively illuminating said points with a light beam whose photons have an energy of higher value than the energy Ei which separates the two intermediate levels; and optical detectors placed behind said substrate.
Claim 5
Dependent Claim
30 words
A device according to claim 2, wherein the lower intermediate level is separated from the bottom of the conduction band by an energy Ee at least equal to 0.7 eV.
Claim 6
Dependent Claim
15 words
A device according to claim 2, wherein the lower intermediate level is a trapping level.
Claim 7
Dependent Claim
48 words
A device according to claim 2, wherein said device includes erasing means having a source for illuminating the memory points with photons of energy lower than Ep but higher than the energy Ee + Ei which separates the lower intermediate level from the bottom of the conduction band.
Claim 8
Dependent Claim
28 words
A device according to claim 2, wherein said optical detectors include means for detecting any absorption of said light beam whose photons have an energy greater than Ei.
Claim 9
Dependent Claim
19 words
A device according to claim 2, with said optical detectors being means for detecting the luminescence of said substrate.
Claim 10
Dependent Claim
12 words
A device according to claim 2, with the optical sources being lasers.
Claim 11
Dependent Claim
32 words
A device according to claim 2, with Ep being on the order of 2 eV, Ei being on the order of 0.8 eV and Ee being on the order of 1 eV.
Claim 12
Dependent Claim
25 words
A device according to claim 2, with said optical source emitting photons with energy greater than Ei emitting in the vicinity of 1.1 Mu wavelength.
Claim 13
Dependent Claim
30 words
A device according to claim 1, wherein the lower intermediate level is separated from the bottom of the conduction band by an energy Ee at least equal to 0.7 eV.
Claim 14
Dependent Claim
15 words
A device according to claim 1, wherein the lower intermedaite level is a trapping level.
Claim 15
Dependent Claim
19 words
A device according to claim 12, wherein the upper intermediate level is an excited state of said trapping level
Claim 16
Dependent Claim
48 words
A device according to claim 1, wherein said device includes erasing means having a source for illuminating the memory points with photons of energy lower than Ep but higher than the energy Ee + Ei which separates the lower intermediate level from the bottom of the conduction band.
Claim 17
Dependent Claim
28 words
A device according to claim 1, wherein said optical detectors included means for detecting any absorption of said light beam whose photons have an energy greater than Ei.
Claim 18
Dependent Claim
19 words
A device according to claim 1, with said optical detectors being means for detecting the luminescence of said substrate.
Claim 19
Dependent Claim
12 words
A device according to claim 1, with the optical sources being lasers.
Claim 20
Dependent Claim
32 words
A device according to claim 1, with Ep being on the order of 2 eV Ei being on the order of 0.8 eV and Ee being on the order of 1 eV.
Claim 21
Dependent Claim
31 words
A device according to claim 1, with said first optical source being an ionized argon laser which emits at least one of the two lines at 4880 A and 5145 A.
Claim 22
Dependent Claim
25 words
A device according to claim 1, with said optical source emitting photons with energy greater than Ei emitting in the vicinity of 1.1 Mu wavelength.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-11 | 1976-12-11 | 1977-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-11 | 1980-12-11 | 1981-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-11 | 1984-12-11 | 1985-06-12 | $7700.00 | Window Closed / Lapsed |