Electrophoretic photoresist composition and a method of forming etch resistant masks
Abstract
Abstract A PHOTORESIST COMPOSITION WHICH CAN BE UNIFORMLY DEPOSITED ON A METAL SUBSTRATE BY ELECTROPHORESIS IS PROVIDED. THE EECTROPHORETIC PHOTORESIST COMPOSITION IS AN EMULSION PREPARED FROM A FIRST SOLUTION CONTAINING A POLYCHLOROPRENE MATERIAL, A SENSITIZER, A STABILIZER AND A POLYMERIC RESIN BINDER AND A SECOND SOLUTION CONTAINING A WETTING AGENT, SURFACTANTS, N-METHYL-2-PYRROOLIDONE AND TRIETHANOL AMINE. THE EMULSION IS FORMED BY THE DROPWISE ADDITION OF THE SECOND SOLUTION INTO THE FIRST SOLUTION WHILE AGITATING THE SAME. A METHOD FOR PREPARING FINE LINE STRUCTURES USING THE ABOVE COMPOSITION IS ALSO PROVIDED. THE HIGH RESOLUTION PHOTORESIST COMPOSITION OF THIS INVENTION IS USED IN THE MANUFACTURE OF SEMICONDCTOR DEVICES SUCH AS, DIODES, TRANSISTORS, AND MICROELECTRONIC BLOCKS WHERE VERY FINE LINES OF 1 MICRON THICKNESS OR LESS ARE REQUIRED. THE COMPOSITION CAN ALSO BE USED TO ELECTROPHORETICALLY COAT IRREGULARLY SHAPED ARTICLES REQUIRING UNIFORMITY OF COATING.
Inventors
- 👤 P Bakos
Bibliographic Details
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