US3737741A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices utilizing geometrically controllable current filaments
Assignee: AT&T Inc
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Filing: 1971-11-22
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Granted: 1973-06-05
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Expires: 1991-11-22
Abstract
Abstract A PNIPN (or PNPN) semiconductor structure, with a pair of terminals on each of the intermediate N and P zones, is forward biased with respect to the outer P and N zones. Thereby, a current filament is formed whose lateral position can be controlled by control of the voltages across each of the pairs of terminals, as well as by an external magnetic field. Such current filaments can be utilized in a variety of semiconductor devices including magnetic field detectors, optical cameras, binary encoders and other logic devices.
Inventors
- 👤 D Bartelink
- 👤 G Persky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 01:46
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D48/00; H10D48/40; H10F; H10F39/00; H10F39/10; H10F39/107
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
151 words
Semiconductor apparatus which comprises a semiconductor body having a PNIPN conductivity type zone structure in which one of the intermediate N and the intermediate P type zones has a pair of spaced apart terminals thereon adapted for the application of applied voltages, and in which the other of the intermediate N and the intermediate Ptype zones has at least one terminal thereon adapted for the application of applied voltages, said terminals of the pair being spaced apart a sufficient distance such that: when a sufficient forward bias is applied across the outer P and N zones in the presence of a reverse bias applied across the intermediate N zone with respect to the intermediate P zone, a single current filament between the intermediate zones is formed whose axis is located between the pair of spaced apart terminals, the thickness of the I zone being sufficient to prevent avalanche breakdown during operation.
Claim 2
Dependent Claim
151 words
Semiconductor apparatus which comprises a semiconductor body having a PNIPN conductivity type zone structure in which one of the intermediate N and the intermediate P type zones has a pair of spaced apart terminals thereon adapted for the application of applied voltages, and in which the other of the intermediate N and the intermediate Ptype zones has at least one terminal thereon adapted for the application of applied voltages, said terminals of the pair being spaced apart a sufficient distance such that: when a sufficient forward bias is applied across the outer P and N zones in the presence of a reverse bias applied across the intermediate N zone with respect to the intermediate P zone, a single current filament between the intermediate zones is formed whose axis is located between the pair of spaced apart terminals, the thickness of the I zone being sufficient to prevent avalanche breakdown during operation.
Claim 3
Dependent Claim
27 words
Apparatus according to claim 1 which further includes means for controlling the electrical potential between the spaced apart terminals on at least one of the intermediate zones.
Claim 4
Dependent Claim
25 words
Apparatus according to claim 1 which further includes means for controlling the electrical potential across the spaced apart terminals on both of the intermediate zones.
Claim 5
Dependent Claim
21 words
Apparatus according to claim 1 which further includes means for applying the forward bias across the outer P and N zones.
Claim 6
Dependent Claim
38 words
Apparatus according to claim 1 which further includes means for controlling the voltage potential between one of the spaced apart terminals on the intermediate P zone and one of the spaced apart terminals on the intermediate N zone.
Claim 7
Dependent Claim
34 words
Apparatus according to claim 1 which further includes an auxiliary N zone situated within the intermediate N zone, said auxiliary N zone running between the spaced apart terminals of the said intermediate N zone.
Claim 8
Dependent Claim
34 words
Apparatus according to claim 1 which further includes an auxiliary P zone situated within the intermediate P zone, said auxiliary P zone running between the spaced apart terminals of the said intermediate P zone.
Claim 9
Dependent Claim
147 words
Semiconductor apparatus which comprises a semiconductor body having a PNPN conductivity type zone structure in which one of the intermediate N and the intermediate P-type zones has a pair of spaced apart terminals thereon adapted for external connection, and in which the other of the intermediate N and the intermediate P-type zones has at least one terminal thereon adapted for the application of applied voltages, said terminals of the pair being spaced apart a sufficient distance such that: when a sufficient forward bias is applied across the outer P and N zones in the presence of a reverse bias applied across the intermediate N zone with respect to the intermediate P zone, a single current filament between the intermediate zones is formed whose axis is located between the pair of spaced apart terminals, the reverse bias being sufficiently low that avalanche breakdown does not occur during operation.
Claim 10
Dependent Claim
147 words
Semiconductor apparatus which comprises a semiconductor body having a PNPN conductivity type zone structure in which one of the intermediate N and the intermediate P-type zones has a pair of spaced apart terminals thereon adapted for external connection, and in which the other of the intermediate N and the intermediate P-type zones has at least one terminal thereon adapted for the application of applied voltages, said terminals of the pair being spaced apart a sufficient distance such that: when a sufficient forward bias is applied across the outer P and N zones in the presence of a reverse bias applied across the intermediate N zone with respect to the intermediate P zone, a single current filament between the intermediate zones is formed whose axis is located between the pair of spaced apart terminals, the reverse bias being sufficiently low that avalanche breakdown does not occur during operation.
Claim 11
Dependent Claim
27 words
Apparatus according to claim 8 which further includes means for controlling the electrical potential between the spaced apart terminals on at least one of the intermediate zones.
Claim 12
Dependent Claim
14 words
Apparatus according to claim 8 which further includes means for applying the forward bias.
References Cited (Backward Citations)
US3465216A
Cited
US3668439A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-04 | 1976-12-04 | 1977-06-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-04 | 1980-12-04 | 1981-06-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-04 | 1984-12-04 | 1985-06-05 | $7700.00 | Window Closed / Lapsed |