Patent US4706676A successfully refreshed from Google Patents.
US3735318A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fusing resistor
Assignee: Duracell Inc USA
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Filing: 1971-11-04
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Granted: 1973-05-22
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Expires: 1991-11-04
Abstract
Abstract A layer of material is disposed over at least a portion of a resistive film of a resistor, the material having a melting point lower than the melting point of the resistive film and when melted, chemically reacts with the resistive film to render at least a portion of the film non-conductive.
Inventors
- 👤 J Bucklin
- 👤 J Utken
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 04:22
CPC Classifications
H; H01; H01H; H01H85/00; H01H85/02; H01H85/04; H01H85/041; H01H85/046
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
14 words
A resistor according to claim 1 wherein said glass frit is a soda-lime glass.
Claim 2
Dependent Claim
22 words
A resistor according to claim 1 wherein said layer is centrally disposed in said resistor and is continuous around its entire periphery.
Claim 3
Dependent Claim
12 words
A resistor according to claim 1 wherein said layer is a spot.
Claim 4
Dependent Claim
23 words
A resistor according to claim 3 wherein there are spiral grooves in said resistive film providing a resistor path of a predetermined length.
Claim 5
Dependent Claim
31 words
A resistor according to claim 4 wherein there are spiral grooves in said resistive film providing a resistive path of a predetermined length and said spot extends across said resistive path.
Claim 6
Dependent Claim
69 words
In a tin oxide resistor wherein a tin oxide based film is carried on a non-conductive substrate, the improvement comprising providing a layer of glass frit material over at least a portion of said tin oxide based film which has a melting point below that of said tin oxide film and which when melted reacts chemically with said tin oxide film to render at least a portion thereof non-conductive.
Claim 7
Independent Claim
62 words
A method of open circuiting a tin oxide thin film resistor which comprises providing a layer of glass frit material over at least a portion of said tin oxide thin film having a melting point below said thin film which when melted chemically reacts with said thin film to render it non-conductive, and melting said glass frit material upon overloading said resistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-05-21 | 1976-11-20 | 1977-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-05-21 | 1980-11-20 | 1981-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-05-21 | 1984-11-20 | 1985-05-22 | $7700.00 | Window Closed / Lapsed |