Abstract High voltage transistorized pulse circuit controlling a high voltage pulse as might be applied to a piezoelectric crystal for operating a hammer or a wide line high speed printer. The dimensional change of a piezoelectric crystal is a function of the potential in an application of energy which is applied to the crystal. The crystal is initially charged across its width which is transverse to the length of the crystal causing a reduction in its length thereby storing potential energy for later utilization. When the crystal is to be actuated, the crystal is discharged and the charge stored on the crystal plates is quickly dissipated through a plurality of cascaded transistorized switches. Each switch has an individual breakdown voltage rating which is proportional to the circuit voltage, therefore it is necessary to sequentially control the turning on and turning off of the individual transistorized switches to prevent the collector-emitter voltage of the several transistors from exceeding their breakdown voltage rating.
Inventors
👤 N Shukla
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-28 11:50
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/10
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
169 words
A high voltage semiconductor pulse actuator circuit comprising: a resistor electrically connected to a source of high voltage; current storage means electrically connected to said resistor in a charging circuit; a plurality of switching transistors electrically connected in a series circuit, said series circuit electrically connected to the junction of said resistor and said current storage means for controlling the discharge of said current storage means; voltage divider means comprising a plurality of high resistant elements electrically connected to said source of high voltage for supplying each of said transistors with a voltage proportional to the voltage value of said source of high voltage; means electrically connected to said transistors for sequentially turning on said transistors commencing wIth the transistor electrically farthest from said current storage means for providing a low resistance discharge path for said current storage means when all of said transistors are conducting; and timing means electrically connected in the base circuit of each of said transistors for controlling the period of conduction of said transistors.
Claim 2
Dependent Claim
169 words
A high voltage semiconductor pulse actuator circuit comprising: a resistor electrically connected to a source of high voltage; current storage means electrically connected to said resistor in a charging circuit; a plurality of switching transistors electrically connected in a series circuit, said series circuit electrically connected to the junction of said resistor and said current storage means for controlling the discharge of said current storage means; voltage divider means comprising a plurality of high resistant elements electrically connected to said source of high voltage for supplying each of said transistors with a voltage proportional to the voltage value of said source of high voltage; means electrically connected to said transistors for sequentially turning on said transistors commencing wIth the transistor electrically farthest from said current storage means for providing a low resistance discharge path for said current storage means when all of said transistors are conducting; and timing means electrically connected in the base circuit of each of said transistors for controlling the period of conduction of said transistors.
Claim 3
Dependent Claim
36 words
The high voltage semiconductor pulse actuator circuit according to claim 1 wherein said current storage means is an elongated piezoelectric crystal having a pair of spaced broadsides extending in the direction of length of said crystal.
Claim 4
Dependent Claim
33 words
The high voltage semiconductor actuator circuit according to claim 2 wherein said crystal is charged across its broadsides and said crystal contracts in the direction of its length in response to the charge.
Claim 5
Dependent Claim
52 words
The high voltage semiconductor pulse actuator circuit according to claim 1 wherein said timing means comprises a plurality of resistor-capacitor timing circuits having their respective timing constants substantially equal wherein each capacitor of said resistor-capacitor timing circuit and initially charged to the voltage applied to this respective transistor by said voltage divider.