US3730765A
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Method of providing polycrystalline silicon regions in monolithic integrated circuits
Assignee: General Electric Co
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Filing: 1970-09-15
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Granted: 1973-05-01
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Expires: 1990-09-15
Abstract
Abstract THIS INVENTION RELATES TO A METHOD OF PROVIDING SELECVIDING, WITHIN A BODY OF MONOCRYSTALLINE SILICON SEMICONDUCTOR MATERIAL, POLYCRYSTALLINE REGIONS AT SELECTED LOCATIONS. SUCH REGIONS MAY CONSIST, FOR EXAMPLE, OF COLUMNS OR WALLS EXTENDING TO THE EXTERIOR SURFACE FROM SELECTED INTERNAL LOCATIONS, AND MAY BE SUITABLY DOPED TO PROVIDE ISOLATION OR TO PROVIDE PATHS OF LOW RESISTIVITY FORMING LOW RESISTANCE CONNECTORS TO SELECTED LOCATIONS WITHIN THE MONOCRYSTALLINE BODY. D R A W I N G
Inventors
- 👤 L Stein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 04:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10W; H10W10/00; H10W10/01; H10W10/021; H10W10/041; H10W10/20; H10W10/40; H10W20/00; H10W20/01; H10W20/021; H10W20/20; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/085; Y10S148/10; Y10S148/122
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-30 | 1976-10-30 | 1977-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-30 | 1980-10-30 | 1981-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-30 | 1984-10-30 | 1985-05-01 | $7700.00 | Window Closed / Lapsed |