US3725753A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Inverse gate semiconductor controlled rectifier
Assignee: Westinghouse Brake English Electric Semi Conductors Ltd
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Filing: 1972-04-14
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Granted: 1973-04-03
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Expires: 1992-04-14
Abstract
Abstract An inverse gate semiconductor controlled rectifier device including a base region, and main and auxiliary emitter regions respectively forming a main and auxiliary PN junction with the said base region is provided with a conductive layer located on the surface of the base region in ohmic contact therewith and extending from adjacent the auxiliary emitter junction to alongside an edge of the main emitter junction but not of itself bridging either the main or auxiliary junction. The conductive layer, in operation, expands a preferential current path between the auxiliary emitter and main emitter along the said edge.
Inventors
- 👤 J Garrett
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:44
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/27; H10D18/00; H10D62/00; H10D62/10; H10D62/17; H10D99/00
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
194 words
An inverse gate semiconductor controlled rectifier device comprising a body of semiconductor material including a first region of one conductivity type, a second region of the other conductivity type, a first PN junction formed between said first and second regions, a third, base region of said one conductivity type, a second PN junction formed between said second and third regions, a fourth, main emitter region of said other conductivity type, a third PN junction formed between said base region and said main emitter region, a fifth, auxiliary emitter region of said other conductivity type and a fourth PN junction formed between said base region and said auxiliary emitter region, a first, main current carrying terminal connected to said first region, a second, main current carrying terminal connected to said main emitter region, an auxiliary terminal connected to said auxiliary emitter region, the direct electrical paths between the fourth, auxiliary emitter, PN junction and the third, main emitter, PN junction having different resistance values, and said base region including a conductive zone for providing paths of equal resistance between all parts of the fourth, auxiliary emitter, PN junction and the third, main emitter, PN junction.
Claim 2
Dependent Claim
194 words
An inverse gate semiconductor controlled rectifier device comprising a body of semiconductor material including a first region of one conductivity type, a second region of the other conductivity type, a first PN junction formed between said first and second regions, a third, base region of said one conductivity type, a second PN junction formed between said second and third regions, a fourth, main emitter region of said other conductivity type, a third PN junction formed between said base region and said main emitter region, a fifth, auxiliary emitter region of said other conductivity type and a fourth PN junction formed between said base region and said auxiliary emitter region, a first, main current carrying terminal connected to said first region, a second, main current carrying terminal connected to said main emitter region, an auxiliary terminal connected to said auxiliary emitter region, the direct electrical paths between the fourth, auxiliary emitter, PN junction and the third, main emitter, PN junction having different resistance values, and said base region including a conductive zone for providing paths of equal resistance between all parts of the fourth, auxiliary emitter, PN junction and the third, main emitter, PN junction.
Claim 3
Dependent Claim
60 words
A device as claimed in claim 1 in which the main emitter region completely surrounds the auxiliary emitter region, both emitter regions being formed on said surface of the base region, and in which the conductive zone covers substantially the whole of the surface of the base region between said emitters wHile not being in ohmic electrical contact with them.
Claim 4
Dependent Claim
29 words
A device as claimed in claim 1 including a further conductive zone adjacent another path of the edge of the main emitter region, the two zones being ohmically connected.
Claim 5
Dependent Claim
21 words
A device as claimed in claim 3 in which the further conductive zone surrounds the periphery of the main emitter region.
Claim 6
Dependent Claim
19 words
A device as claimed in claim 1 in which the main emitter junction is at least partially short circuited.
Claim 7
Dependent Claim
19 words
A device as claimed in claim 1 in which the auxiliary emitter junction is at least partially short circuited.
Claim 8
Dependent Claim
47 words
A device as claimed in claim 5 in which the partial short circuit is formed by a conductive body extending from an ohmic contact with the emitter region through an aperture in the emitter region and the emitter junction to an ohmic contact with the base region.
Claim 9
Dependent Claim
33 words
A device as claimed in claim 5 in which the main emitter region is short circuited to the base region across the main emitter junction at an edge of the main emitter region.
Claim 10
Dependent Claim
26 words
A device as claimed in claim 8 in which said short circuit is formed by a plurality of symmetrically positioned ohmically resistive paths bridging said edge.
Claim 11
Dependent Claim
21 words
A device as claimed in claim 1 and including a discrete resistor connected between the main emitter and the conductive zone.
Claim 12
Dependent Claim
16 words
A device as claimed in claim 3 in which a wire connection joins the conductive zones.
Claim 13
Dependent Claim
66 words
A device as claimed in claim 1 and including a further PN junction in an operatively conductive path between the electrode of the auxiliary emitter and the conductive zone, said junction being so-polarized as to be forward biased in operation by a potential difference applied between the conductive zone and the auxiliary emitter to reverse bias the junction between the auxiliary emitter and the base region.
Claim 14
Dependent Claim
31 words
A device as claimed in claim 12 in which the further PN junction is formed by a diode pellet mounted on the conductive zone and connected to the auxiliary emitter electrode.
Claim 15
Dependent Claim
25 words
A device as claimed in claim 2 in which the conductive zone and the main emitter region are annulii centered on the auxiliary emitter region.
Claim 16
Dependent Claim
27 words
A device as claimed in claim 14 in which the conductive zone and the emitter regions are formed on one face of a body of semiconducting material.
Claim 17
Dependent Claim
42 words
A device as claimed claim 1 in which the main emitter junction apart from the peripheral portion is partially short circuited by means extending through apertures in the emitter region to make ohmic contact between an emitter electrode and the base region.
Claim 18
Dependent Claim
35 words
A circuit including a device as claimed in claim 1 and a control signal generator by-passed by a diode and connected between the auxiliary and main emitter electrodes of the device through a series resistor.
References Cited (Backward Citations)
US3476989A
Cited
US3531697A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-02 | 1976-10-02 | 1977-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-02 | 1980-10-02 | 1981-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-02 | 1984-10-02 | 1985-04-03 | $7700.00 | Window Closed / Lapsed |