US3725752A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Siemens Mobility Ltd
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Filing: 1971-09-15
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Granted: 1973-04-03
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Expires: 1991-09-15
Abstract
Abstract The present disclosure provides a semiconductor device having a first portion which constitutes effectively a transistor and a second portion which constitutes effectively a thyristor; the collector region of the transistor and the anode region of the thyristor being commonly connected to a first lead of the device, the emitter region of the transistor being connected to a second lead of the device, the gated base region of the thyristor being connected to a third lead of the device, and the base region of the transistor portion and the cathode region of the thyristor being commonly connected to a fourth lead of the device.
Inventors
- 👤 J Garrett
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:27
CPC Classifications
H; H10; H10D; H10D88/00; H10D84/00; H10D84/101; H10D84/121
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
166 words
A semiconductor device comprising; (1) a first portion which constitutes a transistor, (2) a second portion which constitutes a thyristor and (3) a third portion which constitutes a diode, (4) the collector region of the transistor portion and the anode of the thyristor portion being commonly connected to a first lead external of the device, (5) the emitter region of the transistor portion being connected to a second lead external of the device, (6) the gate region of the thyristor portion being connected to a third lead external of the device, (7) the base region of the transistor portion and the cathode region of the thyristor portion being commonly connected to a fourth lead external of the device, and (8) one region of the diode being common to the base region of the transistor and connected externally of the device to the emitter of the transistor and the other region of the diode being connected externally of the device to the gate region of the thyristor.
Claim 2
Dependent Claim
166 words
A semiconductor device comprising; (1) a first portion which constitutes a transistor, (2) a second portion which constitutes a thyristor and (3) a third portion which constitutes a diode, (4) the collector region of the transistor portion and the anode of the thyristor portion being commonly connected to a first lead external of the device, (5) the emitter region of the transistor portion being connected to a second lead external of the device, (6) the gate region of the thyristor portion being connected to a third lead external of the device, (7) the base region of the transistor portion and the cathode region of the thyristor portion being commonly connected to a fourth lead external of the device, and (8) one region of the diode being common to the base region of the transistor and connected externally of the device to the emitter of the transistor and the other region of the diode being connected externally of the device to the gate region of the thyristor.
References Cited (Backward Citations)
US3590339A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-02 | 1976-10-02 | 1977-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-02 | 1980-10-02 | 1981-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-02 | 1984-10-02 | 1985-04-03 | $7700.00 | Window Closed / Lapsed |