Method of alloying a monocrystal of a semiconductor

Abstract

Abstract A METHOD OF ALLOYING THE CRYSTALLOGRAPHIC ORIENTED SURFACE OF A MONOCRYSTAL OF AN ELECTRICALLY CONDUCTIVE BODY, MAKING IT POSSIBLE TO OBTAIN AN ALLOYED REGION IN THE FORM OF A STRAIGHT PRISM. IN THE CASE OF A MONOCRYSTAL BODY HAVING A DIAMOND-TYPE LATTIC AND A CRYSTALLOGRAPHIC SURFACE ORIENTED IN THE PLANE (110), AN ALLOYED REGION IS OBTAINED IN THE FORM OF A STRAIGHT TRIHEDRAL PRISM, WHOSE TWO SIDE FACES COINCIDE WITH THE PLANES (111), AND THE THIRD FACE COINCIDES WITH THE SURFACE OF THE INITIAL MONOCRYSTAL, THE PRISM AXIS COINCIDING WITH THE DIRECTION <110>. ALLOYING IS EFFECTED BY MOVEMENT OF THE MOLTEN ZONE OF ALLOYING MATERIAL WHICH IS CAUSED BY PASSING DIRECT CURRENT THROUGH THE CRYSTAL SO THAT THE DENSITY VACTOR OF THE ELECTRIC CURRENT IS PARALLEL TO THE CRYSTAL SURFACE TO BE ALLOYED, WHICH IS ORIENTED IN THE PLANE (110) AND COINCIDES WITH THE DIRECTION <110>, PARALLEL TO THE SURFACE BEING ALLOYED. THIS DIRECTION IS AN INTERSECTION LINE OF THE PLANES (111) OF MAXIMUM ATOM PACKING WHICH SHAPE A "GUIDE GROOVE" IN WHICH THE MOLTEN REGION OF THE ALLOYING MATERIAL IS CAUSED TO MOVE. WHEN MONOCRYSTAL GERMANIUM IS ALLOYED BY THE AFORESAID METHOD, A STRIP RECRYSTALLIZATION LAYER IS OBTAINED FROM THE MELT CONTAINING GALLIUM AND ANTIMONY IN THE SHAPE OF A STRAIGHT TRIHEDRAL PRISM ORIENTED IN THE ABOVE MANNER.

Inventors

• 👤 N Roizin
• 👤 I Larionav
• 👤 A Kolesova

Bibliographic Details