US3723830A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low current, now noise avalanche diode
Assignee: Motorola Solutions Inc
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Filing: 1970-10-14
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Granted: 1973-03-27
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Expires: 1990-10-14
Abstract
Abstract A low current, low noise avalanche diode is disclosed which can be provided on a semiconductor chip, in which a region of highly doped material of one conductivity type is produced in an epitaxial layer of material which is less highly doped and is of the same conductivity type, and at least one finger of such highly doped material extends from said highly doped region towards and makes a PN junction with a region of oppositely doped material. Contacts are applied to the two regions and act as the electrodes of the resultant diode.
Inventors
- 👤 T Frederiksen
- 👤 E Long
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 05:09
CPC Classifications
H; H10; H10D; H10D99/00; H10D8/00; H10D8/20; H10D8/25
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
224 words
A monolithic integrated low current, low noise avalanche diode comprising: a semiconductor substrate having at least one surface, an epitaxial layer of a semiconductor including impurities of one of P and N conductivity types, having a predetermined thickness, and overlying the surface of said substrate, a first region of semiconductor of the same conductivity type as said layer and including a greater concentration of impurities of said one conductivity type than said layer and extending from the surface thereof into said layer to a thickness less than said predetermined thickness, a secOnd region of the opposite conductivity type extending from the surface of said epitaxial layer into said layer and separated from said first region by at least a part of said layer, a finger of semiconductive material having a thickness less than said predetermined thickness extending in said layer from and of the same conductivity type as one of said first region and said second region, and overlapping the other of said regions, and forming a PN junction therewith, said first and second regions being substantially greater in area on the surface of said epitaxial layer than the area of said PN junction and both being exposed on the same side of said epitaxial layer; and electrical contact means on said first and second regions on said same side of said epitaxial layer.
Claim 2
Dependent Claim
224 words
A monolithic integrated low current, low noise avalanche diode comprising: a semiconductor substrate having at least one surface, an epitaxial layer of a semiconductor including impurities of one of P and N conductivity types, having a predetermined thickness, and overlying the surface of said substrate, a first region of semiconductor of the same conductivity type as said layer and including a greater concentration of impurities of said one conductivity type than said layer and extending from the surface thereof into said layer to a thickness less than said predetermined thickness, a secOnd region of the opposite conductivity type extending from the surface of said epitaxial layer into said layer and separated from said first region by at least a part of said layer, a finger of semiconductive material having a thickness less than said predetermined thickness extending in said layer from and of the same conductivity type as one of said first region and said second region, and overlapping the other of said regions, and forming a PN junction therewith, said first and second regions being substantially greater in area on the surface of said epitaxial layer than the area of said PN junction and both being exposed on the same side of said epitaxial layer; and electrical contact means on said first and second regions on said same side of said epitaxial layer.
Claim 3
Dependent Claim
28 words
The invention of claim 1 in which said finger contains the same type and the same concentration of impurities as said first mentioned region and is integral therewith.
Claim 4
Dependent Claim
26 words
The invention of claim 2 in which a portion of said opposite conductivity type is provided in said epitaxial layer, spaced from and surrounding said regions.
Claim 5
Dependent Claim
22 words
The invention of claim 1 in which electrodes are applied to said region and to said material for making electrical contact thereto.
Claim 6
Dependent Claim
13 words
The invention of claim 1 in which said one conductivity type is N.
Claim 7
Dependent Claim
13 words
The invention of claim 1 in which said first conductivity type is N.
Claim 8
Dependent Claim
25 words
The invention of claim 1 in which said electrical contact means are electrodes applied to said first and second regions for making electrical contact thereto.
Claim 9
Dependent Claim
18 words
The invention of claim 1 in which said PN junction overlaps only partially said other of said regions.
References Cited (Backward Citations)
US3403306A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-03-26 | 1976-09-25 | 1977-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-03-26 | 1980-09-25 | 1981-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-03-26 | 1984-09-25 | 1985-03-27 | $7700.00 | Window Closed / Lapsed |