US3723178A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing contact metal layers consisting of chromium or molybdenum on semiconductor components
Assignee: Siemens AG
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Filing: 1971-03-11
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Granted: 1973-03-27
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Expires: 1991-03-11
Abstract
Abstract The invention relates to a method of producing contact metal layers consisting of chromium or molybdenum on semiconductor components. A varnish solution containing the metal compound is applied to the surface of the substrate wafer and converted into the pure metal layer through thermolysis of the varnish containing the metal compound. The invention is particularly well suited for the production of chromium or molybdenum layers on semiconductor crystal surfaces.
Inventors
- 👤 H Sohlbarand
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:02
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W74/00; H10W74/40; H10W74/47; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/106; Y10S430/112
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
14 words
The method according To claim 1, wherein said solvent varnish is photo sensitive varnish.
Claim 2
Dependent Claim
19 words
The method according to claim 1, wherein said varnish is a solution of nitrocellulose dissolved in a butylacetate/ether mixture.
Claim 3
Dependent Claim
23 words
The method according to claim 1, wherein said varnish is nitrocellulose/ether/butylacetate which contains dissolved diacetyldihydrazone-chromium-tetracarbonyl in a concentration of 5 to 10 percent.
Claim 4
Dependent Claim
40 words
The method of claim 3, wherein after applying a layer of said metal compound dissolved in nitrocellulose varnish to said semiconductor, a photosensitive varnish is deposited on top of said nitrocellulose varnish layer to permit further fabrication by photoresist technique.
Claim 5
Dependent Claim
22 words
The method of claim 1, wherein the concentration of said metal compound in said solution is adjusted to 5 to 10 percent.
Claim 6
Dependent Claim
21 words
The method of claim 1, wherein said metal containing varnish is deposited in a layer thickness of about 5 Mu m.
Claim 7
Dependent Claim
21 words
The method of claim 1, wherein said semiconductor body has an oxide coat upon which said metal containing varnish is deposited.
Claim 8
Dependent Claim
26 words
The method of claim 1, wherein said semiconductor body consists of silicon and has a silicon dioxide surface upon which said metal containing varnish is deposited.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-03-26 | 1976-09-25 | 1977-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-03-26 | 1980-09-25 | 1981-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-03-26 | 1984-09-25 | 1985-03-27 | $7700.00 | Window Closed / Lapsed |