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US3720878A Expired / Lapsed US ⏱️ 0.0 years remaining

Transmission line impedance matching circuit

Assignee: Individual
•
Filing: 1971-05-21
•
Granted: 1973-03-13
•
Expires: 1991-05-21
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Abstract

Abstract An impedance-matching solid state amplifier circuit for an antenna circuit in which the impedance matching circuit can be connected at either terminus of the transmission circuit or at any point therebetween and in which the amplifier circuit need not be relied upon for any tuning effect as it relies upon the reflected impedance of the load in the matched impedance transmission circuit.

Inventors

  • 👤 R Rosenberry

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 11:08
CPC Classifications
H; H03; H03H; H03H7/00; H03H7/38; H03H7/40; H03F; H03F1/00; H03F1/56; H03F1/565; H03H11/00; H03H11/02; H03H11/28; H04; H04B; H04B3/00; H04B3/02; H04B3/40

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 123 words
A DC powered circuit for matching the load circuit impedance and generator circuit impedance on the transmission line of a radio frequency circuit, consisting of a solid state RF semiconductor device, first means for establishing current and voltage parameters for said device in said DC powered circuit to provide an input impedance for said DC powered circuit matching said generator circuit output impedance and an output impedance for said DC powered circuit matching said load circuit impedance, said first means being directly connected to the elements of said semi-conductor in said DC circuit, and second means connecting the elements of said semi-conductor device to the transmission line in non-isolating RF relationship to the input and output impedances to which the device is terminated.
Claim 2
Dependent Claim 123 words
A DC powered circuit for matching the load circuit impedance and generator circuit impedance on the transmission line of a radio frequency circuit, consisting of a solid state RF semiconductor device, first means for establishing current and voltage parameters for said device in said DC powered circuit to provide an input impedance for said DC powered circuit matching said generator circuit output impedance and an output impedance for said DC powered circuit matching said load circuit impedance, said first means being directly connected to the elements of said semi-conductor in said DC circuit, and second means connecting the elements of said semi-conductor device to the transmission line in non-isolating RF relationship to the input and output impedances to which the device is terminated.
Claim 3
Dependent Claim 123 words
A DC powered circuit for matching the load circuit impedance and generator circuit impedance on the transmission line of a radio frequency circuit, consisting of a solid state RF semi-conductor device, first means for establishing current and voltage parameters for said device in said DC powered circuit to provide an input impedance for said DC powered circuit matching said generator circuit output impedance and an output impedance for said DC powered circuit matching said load circuit impedance, said first means being directly connected to the elements of said semi-conductor in said DC circuit, and second means connecting the elements of said semi-conductor device to the transmission line in non-isolating RF relationship to the input and output impedances to which the device is terminated.
Claim 4
Dependent Claim 123 words
A DC powered circuit for matching the load circuit impedance and generator circuit impedance on the transmission line of a radio frequency circuit, consisting of a solid state RF semi-conductor device, first means for establishing current and voltage parameters for said device in said DC powered circuit to provide an input impedance for said DC powered circuit matching said generator circuit output impedance and an output impedance for said DC powered circuit matching said load circuit impedance, said first means being directly connected to the elements of said semi-conductor in said DC circuit, and second means connecting the elements of said semi-conductor device to the transmission line in non-isolating RF relationship to the input and output impedances to which the device is terminated.
Claim 5
Dependent Claim 29 words
A DC powered impedance-matching circuit as defined in claim 1, wherein said semi-conductor device has a signal gain characteristic to provide signal amplification between said generator and said load.
Claim 6
Dependent Claim 16 words
A DC powered impedance-matching circuit as defined in claim 1, wherein said semi-conductor device is gated.
Claim 7
Dependent Claim 39 words
A DC powered impedance-matching circuit as defined in claim 1, wherein said first means comprises current-control circuit elements of empirically determined values connected to said semi-conductor device to establish the input and output impedances of the DC powered circuit.
Claim 8
Dependent Claim 17 words
A DC powered impedance-matching circuit as defined in claim 1, wherein said second means comprises coupling coils.
Claim 9
Dependent Claim 19 words
A DC powered impedance-matching circuit as defined in claim 1, including switch means for selectively de-energizing the DC power.

References Cited (Backward Citations)

US2663767A Cited
US3027524A Cited
US3336540A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-03-12 1976-09-11 1977-03-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-03-12 1980-09-11 1981-03-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-03-12 1984-09-11 1985-03-13 $7700.00 Window Closed / Lapsed

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