US3720542A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing dense metal oxide coatings on semiconductor
Assignee: Siemens AG
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Filing: 1971-03-11
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Granted: 1973-03-13
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Expires: 1991-03-11
Abstract
Abstract The invention relates to a method of producing dense metal oxide coatings on semiconductors surfaces. To produce metal oxide coatings which serve as insulation or masking layers on a semiconductor body, an organic compound which contains the metal and oxygen, is dissolved in an organic varnish and applied on the semiconductor surface and transferred into the pure metal oxide layer by thermolysis. The invention is particularly suited for producing A12O3 layers for integrated circuits and transistors.
Inventors
- 👤 H Sohlbrand
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 05:38
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692; H10P50/693; H10P50/695; H10W74/47; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6342; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
102 words
Process for producing dense metal oxide coatings which serve as insulating or masking coatings on semiconductor crystals which comprises coating the surface of the semiconductor, which is desired to be coated, with a metal and oxide containing organic varnish, briefly tempering the varnish layer and converting the tempered varnish layer by thermolysis, at a temperature above 400*C in a dry inert gas atmosphere, into a pure metal oxide layer, and wherein aluminumacetylacetonate, secondary aluminumbutylate or aluminumisopropylate in a varnish consisting of nitrocellulose dissolved in butylacetate/ether or of a photosensitive varnish is used and thermolysis at 250*C results in a pure Al203 layer.
Claim 2
Dependent Claim
102 words
Process for producing dense metal oxide coatings which serve as insulating or masking coatings on semiconductor crystals which comprises coating the surface of the semiconductor, which is desired to be coated, with a metal and oxide containing organic varnish, briefly tempering the varnish layer and converting the tempered varnish layer by thermolysis, at a temperature above 400*C in a dry inert gas atmosphere, into a pure metal oxide layer, and wherein aluminumacetylacetonate, secondary aluminumbutylate or aluminumisopropylate in a varnish consisting of nitrocellulose dissolved in butylacetate/ether or of a photosensitive varnish is used and thermolysis at 250*C results in a pure Al203 layer.
References Cited (Backward Citations)
SU154125A1
Cited
US3615943A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-03-12 | 1976-09-11 | 1977-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-03-12 | 1980-09-11 | 1981-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-03-12 | 1984-09-11 | 1985-03-13 | $7700.00 | Window Closed / Lapsed |