Microelectronic circuit production

Claim 2

A process for producing a microelectronic circuit on a substrate chip which comprises: evaporating a binderless photosensitive metallic-forming compound onto said chip to a thickness sufficient to become entirely exposeD when subjected to radiation; the photosensitive compound being in the form of close-packed, contiguous platelets in the size range of from about 0.1 - 1.75 microns; exposing said compound to radiation in the configuration of the desired circuit; developing said compound to produce the circuit in metal; and removing the undeveloped compound by evaporation at high temperature.

Claim 3

A process for producing a microelectronic circuit on a substrate chip which comprises: evaporating a binderless photosensitive silver halide compound onto said chip to a thickness of about 1,000 - 3,000 A. in the form of close-packed, contiguous platelets, in the size range of about 0.1 - 1.75 microns; exposing said compound to radiation in the configuration of the desired circuit; developing said exposed compound to produce the circuit in metallic silver; and removing the undeveloped portion by evaporation at high temperature.

Claim 4

A process for producing a microelectronic circuit on a substrate chip which comprises: evaporating a binderless photosensitive silver halide compound onto said chip to a thickness of about 1,000 - 3,000 A. in the form of close-packed, contiguous platelets, in the size range of about 0.1 - 1.75 microns; exposing said compound to radiation in the configuration of the desired circuit; developing said exposed compound to produce the circuit in metallic silver; and removing the undeveloped portion by evaporation at high temperature.

Claim 5

A process for producing a microelectronic circuit on a substrate chip which comprises: evaporating a binderless photosensitive metallic-forming compound onto said chip at a chip temperature of less than about 20* C and greater than about -60* C; to a thickness of about 1,000 - 3,000 A.; exposing said compound with radiation in the configuration of the desired circuit; developing said compound to produce the circuit in metallic form; and removing the undeveloped compound by evaporation at high temperature.

Claim 6

A process for producing a microelectronic circuit on a substrate chip which comprises: evaporating a binderless photosensitive metallic-forming compound onto said chip at a chip temperature of less than about 20* C and greater than about -60* C; to a thickness of about 1,000 - 3,000 A.; exposing said compound with radiation in the configuration of the desired circuit; developing said compound to produce the circuit in metallic form; and removing the undeveloped compound by evaporation at high temperature.

Claim 7

The method of claim 3 in which the photosensitive compound is a silver halide.

Claim 8

A process for producing a microelectronic circuit on a substrate chip which comprises: evaporating a binderless photosensitive silver halide onto said chip; at a chip temperature of less than about 20* C and greater than about -60* C; to a thickness of about 1,000 - 3,000 A.; in the form of close-packed, contiguous platelets varying in size from about 0.1 - 1.75 microns; exposing said silver halide to radiation in the configuration of the desired circuit; developing said silver halide to produce the circuit in metallic silver; and removing the undeveloped compound by evaporation at high temperature;

Claim 9

A process for producing a microelectronic circuit on a substrate chip which comprises: evaporating a binderless photosensitive silver halide onto said chip; at a chip temperature of less than about 20* C and greater than about -60* C; to a thickness of about 1,000 - 3,000 A.; in the form of close-packed, contiguous platelets varying in size from about 0.1 - 1.75 microns; exposing said silver halide to radiation in the configuration of the desired circuit; developing said silver halide to produce the circuit in metallic silver; and removing the undeveloped compound by evaporation at high temperature;