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US3715677A Expired / Lapsed US ⏱️ 0.0 years remaining

Amplifiers of hybrid integrated subminiaturised circuit design

Assignee: Thales SA
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Filing: 1971-01-28
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Granted: 1973-02-06
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Expires: 1991-01-28
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Abstract

Abstract A tunnel diode or transistor amplifier in the form of a hybrid integrated circuit, whose gain bandwidth product is as large as possible. The amplifier comprises a circuit having a band-pass filter structure, whose coil elements form the linking structures.

Inventors

  • 👤 C Vergnolle

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 12:13
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/04; H03F3/10; H03F3/12

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 223 words
An amplifier system for ultra high frequencies, comprising in combination : a conductive stud supporting a semiconductor device of the junction type having at least a first and a second region having respective types of conductivity, said first region being in contact with said stud ; and a capacitor having one of its electrodes in contact with said stud, and another electrode ; a second capacitor having a first electrode substantially in level with said second region, and the other electrode, and a second electrode ; a first metal wire connecting said first electrode with said second region ; a second metal wire connecting said second region and said other electrode : a first, a second and a third terminal, said first and second terminal receiving an input signal, and said second and one of said first and third terminals delivering an amplified output terminal ; said first terminal being connected to said second electrode, and means comprising said stud connecting said second terminal to said one electrode, and to said first region, said wires having lengths negligible with respect to the operating wavelength and building up with said capacitors and the capacitances of said junctions, a band pass filter, having a center frequency substantially equal to the frequency to be amplified ; and means for connecting said system to a bias source,
Claim 2
Dependent Claim 223 words
An amplifier system for ultra high frequencies, comprising in combination : a conductive stud supporting a semiconductor device of the junction type having at least a first and a second region having respective types of conductivity, said first region being in contact with said stud ; and a capacitor having one of its electrodes in contact with said stud, and another electrode ; a second capacitor having a first electrode substantially in level with said second region, and the other electrode, and a second electrode ; a first metal wire connecting said first electrode with said second region ; a second metal wire connecting said second region and said other electrode : a first, a second and a third terminal, said first and second terminal receiving an input signal, and said second and one of said first and third terminals delivering an amplified output terminal ; said first terminal being connected to said second electrode, and means comprising said stud connecting said second terminal to said one electrode, and to said first region, said wires having lengths negligible with respect to the operating wavelength and building up with said capacitors and the capacitances of said junctions, a band pass filter, having a center frequency substantially equal to the frequency to be amplified ; and means for connecting said system to a bias source,
Claim 3
Dependent Claim 223 words
An amplifier system for ultra high frequencies, comprising in combination : a conductive stud supporting a semiconductor device of the junction type having at least a first and a second region having respective types of conductivity, said first region being in contact with said stud ; and a capacitor having one of its electrodes in contact with said stud, and another electrode ; a second capacitor having a first electrode substantially in level with said second region, and the other electrode, and a second electrode ; a first metal wire connecting said first electrode with said second region ; a second metal wire connecting said second region and said other electrode : a first, a second and a third terminal, said first and second terminal receiving an input signal, and said second and one of said first and third terminals delivering an amplified output terminal ; said first terminal being connected to said second electrode, and means comprising said stud connecting said second terminal to said one electrode, and to said first region, said wires having lengths negligible with respect to the operating wavelength and building up with said capacitors and the capacitances of said junctions, a band pass filter, having a center frequency substantially equal to the frequency to be amplified ; and means for connecting said system to a bias source,
Claim 4
Dependent Claim 223 words
An amplifier system for ultra high frequencies, comprising in combination : a conductive stud supporting a semiconductor device of the junction type having at least a first and a second region having respective types of conductivity, said first region being in contact with said stud ; and a capacitor having one of its electrodes in contact with said stud, and another electrode ; a second capacitor having a first electrode substantially in level with said second region, and the other electrode, and a second electrode ; a first metal wire connecting said first electrode with said second region ; a second metal wire connecting said second region and said other electrode : a first, a second and a third terminal, said first and second terminal receiving an input signal, and said second and one of said first and third terminals delivering an amplified output terminal ; said first terminal being connected to said second electrode, and means comprising said stud connecting said second terminal to said one electrode, and to said first region, said wires having lengths negligible with respect to the operating wavelength and building up with said capacitors and the capacitances of said junctions, a band pass filter, having a center frequency substantially equal to the frequency to be amplified ; and means for connecting said system to a bias source,
Claim 5
Dependent Claim 65 words
An amplifier as claimed in claim 1 further comprising a dielectric substrate, having a center hole and two sides, said stud being located in said hole, and means being provided for soldering said stud to said substrate, on one side of said substrate, the other side carrying two metallized strips constituting said first terminal and said second electrode, said second strip constituting said biassing means.
Claim 6
Dependent Claim 40 words
An amplifier system as claimed in claim 1, wherein said semiconductor device is a tunnel diode, said first and said second regions forming junction and having opposite types of conductivity, said first and said second terminal delivering said output signal.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-02-06 1976-08-07 1977-02-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-02-06 1980-08-07 1981-02-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-02-06 1984-08-07 1985-02-06 $7700.00 Window Closed / Lapsed

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