Magnetic field sensor

Claim 2

A magnetic field detector comprising in combination: a. a semiconductor substrate of one conductivity having first second, and third impurity-doped spaced-apart regions of opposite conductivity on one surface thereof respectively defining the source and first and second drain regions of a field effect device; b. an insulating layer overlying said one surface; c. means for generating a longitudinal electric field in said substrate between said source and said first and second drain regions; and d. means overlying said insulating layer intermediate said first region and said second and third regions of said substrate for forming a plurality of coplanar spaced apart inversion layers, said inversion layers respectively contacting portions of said first and second impurity doped regions, and said first and third regions, said inversion layers being spaced apart by a distance such that said longitudinal electric field lowers the potential barrier to charge carriers thereby enabling charge coupling therebetween in the presence of a magnetic field whereby a magnetic field substantially perpendicular to said one surface produces charge coupling between said adjacent inversion layers providing an amplified output signal indicative of the presence of said magnetic field.

Claim 3

A magnetic field detector comprising in combination: a. a semiconductor substrate of one conductivity having first second, and third impurity-doped spaced-apart regions of opposite conductivity on one surface thereof respectively defining the source and first and second drain regions of a field effect device; b. an insulating layer overlying said one surface; c. means for generating a longitudinal electric field in said substrate between said source and said first and second drain regions; and d. means overlying said insulating layer intermediate said first region and said second and third regions of said substrate for forming a plurality of coplanar spaced apart inversion layers, said inversion layers respectively contacting portions of said first and second impurity doped regions, and said first and third regions, said inversion layers being spaced apart by a distance such that said longitudinal electric field lowers the potential barrier to charge carriers thereby enabling charge coupling therebetween in the presence of a magnetic field whereby a magnetic field substantially perpendicular to said one surface produces charge coupling between said adjacent inversion layers providing an amplified output signal indicative of the presence of said magnetic field.

Claim 4

A magnetic field detector comprising in combination: a. a semiconductor substrate of one conductivity having first second, and third impurity-doped spaced-apart regions of opposite conductivity on one surface thereof respectively defining the source and first and second drain regions of a field effect device; b. an insulating layer overlying said one surface; c. means for generating a longitudinal electric field in said substrate between said source and said first and second drain regions; and d. means overlying said insulating layer intermediate said first region and said second and third regions of said substrate for forming a plurality of coplanar spaced apart inversion layers, said inversion layers respectively contacting portions of said first and second impurity doped regions, and said first and third regions, said inversion layers being spaced apart by a distance such that said longitudinal electric field lowers the potential barrier to charge carriers thereby enabling charge coupling therebetween in the presence of a magnetic field whereby a magnetic field substantially perpendicular to said one surface produces charge coupling between said adjacent inversion layers providing an amplified output signal indicative of the presence of said magnetic field.

Claim 5

A magnetic field detector as set forth in claim 1 wherein said means for forming inversion layers comprises first and second gate electrodes spaced apart by a distance on the order of 4 microns or less.

Claim 6

A magnetic field detector as set forth in claim 2 wherein said first gate is electrically connected to said second drain region and said second gate is electrically connected to said first drain region providing positive feedback in response to magnetically induced charge coupling.

Claim 7

A magnetic field detector comprising: a. a semiconductor substrate of one conductivity having first, second and third spaced apart regions on one surface thereof, said regions being doped with impurities of opposite conductivity to form respectively the source and first and second drain regions of an insulated gate field effect device; b. an insulating layer having means therein enabling electrical contact to said source and drain regions; c. means for generating a longitudinal electric field in said substrate between said source and said first and second drain regions; d. a first metal gate electrode deposited on said insulating layer to overlie a portion of said one surface between said sourCe region and said first drain region; e. a second metal gate electrode deposited on said insulating layer substantially parallel to said first metal gate, said second metal gate overlying a portion of said one surface between said source region and said second drain region; f. means for generating inversion layers in the surface of said substrate under said first and second gate electrodes, said first and second gates spaced apart by a predetermined distance such that said longitudinal electric field in the pinch-off region of the voltage characteristics of said insulated gate field effect device lowers the potential barrier to charge carriers between the inversion layers respectively formed under said gates; and g. output means responsive to the change of electrical charge in said inversion layers, whereby a magnetic field substantially perpendicular to said one surface interacts with said electric field to enhance charge coupling between said first and second inversion layers thus providing a magnetic field detector having an enhanced output signal.

Claim 8

A magnetic field detector comprising: a. a semiconductor substrate of one conductivity having first, second and third spaced apart regions on one surface thereof, said regions being doped with impurities of opposite conductivity to form respectively the source and first and second drain regions of an insulated gate field effect device; b. an insulating layer having means therein enabling electrical contact to said source and drain regions; c. means for generating a longitudinal electric field in said substrate between said source and said first and second drain regions; d. a first metal gate electrode deposited on said insulating layer to overlie a portion of said one surface between said sourCe region and said first drain region; e. a second metal gate electrode deposited on said insulating layer substantially parallel to said first metal gate, said second metal gate overlying a portion of said one surface between said source region and said second drain region; f. means for generating inversion layers in the surface of said substrate under said first and second gate electrodes, said first and second gates spaced apart by a predetermined distance such that said longitudinal electric field in the pinch-off region of the voltage characteristics of said insulated gate field effect device lowers the potential barrier to charge carriers between the inversion layers respectively formed under said gates; and g. output means responsive to the change of electrical charge in said inversion layers, whereby a magnetic field substantially perpendicular to said one surface interacts with said electric field to enhance charge coupling between said first and second inversion layers thus providing a magnetic field detector having an enhanced output signal.

Claim 9

A magnetic field detector as set forth in claim 4 wherein said first and second gate electrodes are spaced apart by a distance on the order of 4 microns or less.

Claim 10

A magnetic field detector comprising; a. a semiconductor substrate of one conductivity having first, second and third spaced apart regions on one surface thereof, said first region being doped with impurities of opposite conductivity to form the source of an insulated gate field effect device and said second and third regions being doped with impurities of said opposite conductivity to form respective first and second drain regions of an insulated gate field effect device; b. an insulating layer having means therein enabling electrical contact to said source and drain regions; c. a first metal gate electrode deposited on said insulating layer to overlie a portion of said one surface between said source region and said first drain region, said first gate electrode being connected to said second drain region; d. a second metal gate electrode deposited on said insulating layer substantially parallel to said first metal gate, said first and second gate electrodes being spaced apart by a distance which enhances charge coupling between the inversion layers associated therewith responsive to a magnetic field, said second metal gate overlying a portion of said one surface between said source region and said second drain region, said second gate electrode being electrically connected to said first drain region; e. means for generating an electric field in said substrate between said source and drain regions; f. means for generating inversion layers in the surface of said substrate under said first and second gate electrodes; and a magnetic field detector having an enhanced output signal. g. output means responsive to the change of electrical charge in said inversion layers, whereby a magnetic field substantially perpendicular to said one surface interacts with said electric field to enhance charge coupling between said first and second inversion layers thus providing output signal.

Claim 11

A magnetic field detector comprising; a. a semiconductor substrate of one conductivity having first, second and third spaced apart regions on one surface thereof, said first region being doped with impurities of opposite conductivity to form the source of an insulated gate field effect device and said second and third regions being doped with impurities of said opposite conductivity to form respective first and second drain regions of an insulated gate field effect device; b. an insulating layer having means therein enabling electrical contact to said source and drain regions; c. a first metal gate electrode deposited on said insulating layer to overlie a portion of said one surface between said source region and said first drain region, said first gate electrode being connected to said second drain region; d. a second metal gate electrode deposited on said insulating layer substantially parallel to said first metal gate, said first and second gate electrodes being spaced apart by a distance which enhances charge coupling between the inversion layers associated therewith responsive to a magnetic field, said second metal gate overlying a portion of said one surface between said source region and said second drain region, said second gate electrode being electrically connected to said first drain region; e. means for generating an electric field in said substrate between said source and drain regions; f. means for generating inversion layers in the surface of said substrate under said first and second gate electrodes; and a magnetic field detector having an enhanced output signal. g. output means responsive to the change of electrical charge in said inversion layers, whereby a magnetic field substantially perpendicular to said one surface interacts with said electric field to enhance charge coupling between said first and second inversion layers thus providing output signal.