US3714520A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High temperature low ohmic contact to silicon
Assignee: General Electric Co
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Filing: 1970-12-15
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Granted: 1973-01-30
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Expires: 1990-12-15
Abstract
Abstract A high temperature low ohmic electrical contact is made to a silicon body by forming a very thin layer of silicon carbide over the silicon body and then forming a metallic layer, such as a refractory metal, over the silicon carbide to form a high quality low ohmic contact to the surface of the silicon body.
Inventors
- 👤 W Engeler
- 👤 L Cordes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 04:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10P; H10P95/00; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/5363; H10W72/59
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
68 words
In combination, a silicon body, an insulating layer overlying said silicon body and having an aperture therein exposing a portion of said silicon body, a thin film of silicon carbide over said portion of said silicon body, said film having a thickness of between approximately 10 and 50 Angstroms, and a metal layer contacting said thin film whereby a low ohmic contact is provided to said silicon body.
Claim 2
Dependent Claim
68 words
In combination, a silicon body, an insulating layer overlying said silicon body and having an aperture therein exposing a portion of said silicon body, a thin film of silicon carbide over said portion of said silicon body, said film having a thickness of between approximately 10 and 50 Angstroms, and a metal layer contacting said thin film whereby a low ohmic contact is provided to said silicon body.
Claim 3
Dependent Claim
20 words
The combination of claim 1 wherein said portion of the silicon body is of differing conductivity type from said body.
Claim 4
Dependent Claim
25 words
The combination of claim 1 wherein said metal layer is selected from a group consisting of molybdenum, tungsten, chromium, platinum, nickel, palladium, titanium and silicon.
References Cited (Backward Citations)
US3078328A
Cited
US3290570A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-01-30 | 1976-07-31 | 1977-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-01-30 | 1980-07-31 | 1981-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-01-30 | 1984-07-31 | 1985-01-30 | $7700.00 | Window Closed / Lapsed |