Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
110 words
In a method of making a magnetic memory, providing first and second self-supporting conductive planar members, forming electrically insulated conductors in a common plane of each planar member spaced from a surface thereof and also forming in said surface of at least one planar member a plurality of spaced channels extending in a direction so as to cross said conductors, disposing said planar members in opposed relation to one another with the conductors of one planar member opposite and parallel to respective conductors of the other planar member and so that the channels form tunnels crossed by conductors on opposite sides thereof, and inserting wire-like memory elements into said tunnels.
Claim 2
Dependent Claim
110 words
In a method of making a magnetic memory, providing first and second self-supporting conductive planar members, forming electrically insulated conductors in a common plane of each planar member spaced from a surface thereof and also forming in said surface of at least one planar member a plurality of spaced channels extending in a direction so as to cross said conductors, disposing said planar members in opposed relation to one another with the conductors of one planar member opposite and parallel to respective conductors of the other planar member and so that the channels form tunnels crossed by conductors on opposite sides thereof, and inserting wire-like memory elements into said tunnels.
Claim 3
Dependent Claim
179 words
In a method of making a magnetic memory, providing first and second self-supporting conductive planar members, forming dielectric-filled spaced parallel channels in one surface of each planar member and a plurality of spaced parallel memory element channels in the other surface of at least one planar member extending in a direction so as to cross said dielectric-filled channels, forming a plurality of isolating channels in said other surface of each planar member parallel to said dielectric-filled channels and having a location, width, and depth relative thereto so as to electrically isolate spaced parallel conductive portions of each planar member to thereby form a plurality of spaced, electrically isolated conductors parallel to said dielectric-filled channels and located in a common plane perpendicularly spaced from said other surface, and disposing said planar members in opposed relation to one another with the conductors and the memory element channels of each planar member opposite and parallel to respective conductors of the other planar member and so that the memory element channels form memory element receiving tunnels crossed by conductors on opposite sides thereof.
Claim 4
Dependent Claim
179 words
In a method of making a magnetic memory, providing first and second self-supporting conductive planar members, forming dielectric-filled spaced parallel channels in one surface of each planar member and a plurality of spaced parallel memory element channels in the other surface of at least one planar member extending in a direction so as to cross said dielectric-filled channels, forming a plurality of isolating channels in said other surface of each planar member parallel to said dielectric-filled channels and having a location, width, and depth relative thereto so as to electrically isolate spaced parallel conductive portions of each planar member to thereby form a plurality of spaced, electrically isolated conductors parallel to said dielectric-filled channels and located in a common plane perpendicularly spaced from said other surface, and disposing said planar members in opposed relation to one another with the conductors and the memory element channels of each planar member opposite and parallel to respective conductors of the other planar member and so that the memory element channels form memory element receiving tunnels crossed by conductors on opposite sides thereof.
Claim 5
Dependent Claim
22 words
The invention in accordance with claim 2, wherein said method includes the additional step of inserting wire-like memory elements into said tunnels.
Claim 6
Dependent Claim
17 words
The invention in accordance with claim 3, wherein said channels are formed using precision chemical etching techniques.
Claim 7
Dependent Claim
48 words
The invention in accordance with claim 3, wherein each isolating channel is formed opposite a respective conductor if its planar member with a width extending at least beyond the nearest side of each of the dielectric-filled channels forming the conductor and with a depth extending to the conductor.
Claim 8
Dependent Claim
65 words
The invention in accordance with claim 3, wherein said method includes the additional steps of recessing the conductors of each planar member from said one surface thereof, filling said recesses with dielectric material, and providing a conductive layer adjacent and in electrical contact with the surface of each planar member containing said recesses so as to provide conductive encirclement of each pair of opposed conductors.
Claim 9
Dependent Claim
34 words
The invention in accordance with claim 3, wherein said method includes the additional step of providing a magnetic layer adjacent at least one of the surfaces of said planar members containing said dielectric-filled channels.
Claim 10
Dependent Claim
29 words
The invention in accordance with claim 3, wherein said method includes the additional step of stacking a plurality of opposed pairs of planar members to form a three-dimensional memory.
Claim 11
Dependent Claim
53 words
The invention in accordance with claim 3, wherein each wire-like memory element has a conductive inner wire and a magnetic thin film thereon, and wherein said method includes forming insulated connecting conductors in one of said planar membeRs and electrically connecting said connecting conductors to respective conductive inner wires of said memory elements.