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US3706915A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device with low impedance bond

Assignee: General Electric Co
•
Filing: 1970-03-09
•
Granted: 1972-12-19
•
Expires: 1990-03-09
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Abstract

Abstract A semiconductor device is formed by scoring a conductive surface of a substrate and locating a semiconductive element over a portion of the capillary formed by scoring. Solder in molten form is associated with the portion of the capillary remote from the semiconductive element and is drawn by the capillary under the semiconductive element to form a tenacious, low impedance interconnection therewith. The substrate may be a dielectric or a metal heat sink. Leads may be secured to the substrate similarly as the semiconductive element is secured. A dielectric substrate may be similarly secured to a metal heat sink. Multiple interconnecting or parallel capillaries may be employed. The capillaries may be provided with a remote interconnection, an interconnection for solder receipt, or an indicator portion remote from solder receipt. Plural semiconductive elements may be mounted to a single substrate with solder fed to the semiconductive elements simultaneously or sequentially. On a dielectric substrate the semiconductive elements may be electrically isolated by removing a conductive surface portion after soldering. The capillaries may also take the form of apertures.

Inventors

  • 👤 William F Lootens
  • 👤 Joseph K Flowers

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 17:58
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10D; H10D99/00; H10W40/00; H10W40/70; H10W40/77; H10W40/778; H10W70/00; H10W70/20; H10W74/00; H10W74/10; H10W74/111; H10W74/121; H10W74/131; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/07351; H10W72/07353; H10W72/07354; H10W72/331; H10W72/334; H10W72/341; H10W72/347; H10W72/351; H10W72/352; H10W72/353; H10W72/354; H10W72/90; H10W72/931; H10W90/00; H10W90/701; H10W90/731; H10W90/736

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 121 words
A semiconductor device comprising substrate means providing an electrically and thermally conductive flat planar surface, a semiconductive element mounted on said substrate having a flat planar first major surface facing said substrate surface, an electrically and thermally conductive contact on said first major surface, capillary passages in said substrate extending from a point outside the periphery of said semiconductive element thereon to a location interposed between said substrate means and said semiconductive element, the entirety of the surface portions of said substrate between said capillaries being flat and in opposed face-to-face contact with said semiconductive element flat first major surface for enhanced heat transfer therebetween, and solder means located within said capillary means and bonding said contact to said substrate means.
Claim 2
Dependent Claim 121 words
A semiconductor device comprising substrate means providing an electrically and thermally conductive flat planar surface, a semiconductive element mounted on said substrate having a flat planar first major surface facing said substrate surface, an electrically and thermally conductive contact on said first major surface, capillary passages in said substrate extending from a point outside the periphery of said semiconductive element thereon to a location interposed between said substrate means and said semiconductive element, the entirety of the surface portions of said substrate between said capillaries being flat and in opposed face-to-face contact with said semiconductive element flat first major surface for enhanced heat transfer therebetween, and solder means located within said capillary means and bonding said contact to said substrate means.
Claim 3
Dependent Claim 21 words
A semiconductor device according to claim 1 in which said capillary means define a plurality of grooves in said substrate means.
Claim 4
Dependent Claim 21 words
A semiconductor device according to claim 1 in which said capillary means converge at a point remote from said semiconductive element.
Claim 5
Dependent Claim 64 words
A semiconductor device according to claim 1 in which said capillary means converge at a point remote from said semiconductive element, a residual portion of said solder means is located at the convergence, an oxide film is associated with said residual portion of said solder means at said convergence, and said solder means underlying said semiconductive element is relatively free of oxide associated therewith.
Claim 6
Dependent Claim 65 words
A semiconductor device according to claim 1 in which said capillary means extends from said semiconductive element to an indicator point separated from said remote point by said semiconductive element, a residual portion of said solder means is associated with said capillary means adjacent said remote point and a leading portion of said solder means is associated with said capillary means adjacent said indicator point.

References Cited (Backward Citations)

US3062981A Cited
US3291578A Cited
US3449173A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1975-12-19 1976-06-19 1976-12-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1979-12-19 1980-06-19 1980-12-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1983-12-19 1984-06-19 1984-12-19 $7700.00 Window Closed / Lapsed

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