US3706079A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Three-line cell for random-access integrated circuit memory
Assignee: Intel Corp
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Filing: 1971-09-16
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Granted: 1972-12-12
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Expires: 1991-09-16
Abstract
Abstract A THREE-LINE DYNAMIC STORAGE CELL READILY ADAPTABLE FOR USE IN A RANDOM-ACCESS INTEGRATED CIRCUSIT MEMORY WHICH UTILIZES METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICES OR METAL-INSULATED-SEMICONDUCTOR (MIS) DEVICES IS DISCLOSED. THE CELL, WHICH INCLUDES THREE FIELD EFFECT DEVICES, UTILIZES THE PARASITIC CAPACITANCE (ASSOCIATED WITH A LEAD COUPLING ONE FIELD EFFECT DEVICE WITH ANOTHER DEVICE AND THE SUBSTRATE SUPPORTING THE CELL) FOR STORING AN ELECTRICAL CHARGE. THREE CONTROL LINES ARE USED WITH THE CELL FOR READING AND WRITING INFORMATION INTO AND FROM THE CELL.
Inventors
- 👤 Leslie L Vadasz
- 👤 Joel A Karp
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 09:28
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/405
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-12-12 | 1976-06-12 | 1976-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-12-12 | 1980-06-12 | 1980-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-12-12 | 1984-06-12 | 1984-12-12 | $7700.00 | Window Closed / Lapsed |