US3705309A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film optoelectronic semiconductor device using light coupling
Assignee: Westinghouse Electric Corp
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Filing: 1971-02-05
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Granted: 1972-12-05
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Expires: 1991-02-05
Abstract
Abstract An electro-optical switch composed of a film of semiconductor material, such as for example CdS, CdSe, containing suitable dopants and in which a first electro-luminescent region for generating photons of radiation is disposed in one portion of the film and a second photo-conductive region for receiving the photons is disposed in another portion of the film, which film has a thickness of from about 2000 A to about 3 microns, and means being provided for inducing the generation of photons in the first region, optically guiding the photons in the plane of the film to the second region and for receiving the photons in the second region.
Inventors
- 👤 Thomas P Brody
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 00:27
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/20; H10F55/25; H10F55/255; H10F99/00
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
27 words
The device of claim 1 wherein the semiconductor material is at least one material selected from the group consisting of Group III-V compounds and Group II-VI compounds.
Claim 2
Dependent Claim
44 words
The device of claim 1 wherein the semiconductor material is at least one material selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, GaAs, GaP, InAs, InP, AlAs, GaAlAs, Cd(Sx Se1 x), Cd(Sex Te1 x), where x ranges from 0 to 1.
Claim 3
Dependent Claim
76 words
The device of claim 1 wherein the body of semiconductor material is of a first type of semiconductivity, the means for inducing and receiving photons include spaced regions of a second-type of semiconductivity in the body which regions each form a p-n junction with the body, the substantial portion of which is disposed in a plane parallel to the plane extending between the regions, and the body of semiconductor material consisting of a Group III-V compound.
Claim 4
Dependent Claim
27 words
The device of claim 4 wherein the semiconductor material is at least one compound selected from the group consisting of GaAs, GaP, InAs, InP, AlS, and GaAlS.
Claim 5
Dependent Claim
12 words
The device of claim 1 wherein the body consists essentially of CdS.
Claim 6
Dependent Claim
22 words
The device of claim 1 wherein the electroluminescent region of the body consists of CdS, and the photoconductive region consists of CdSe.
Claim 7
Dependent Claim
31 words
The device of claim 7 wherein an intermediate overlap region is disposed between the electroluminescent region and the photoconductive region and is composed of a homogeneous mixture of CdS and CdSe.
Claim 8
Dependent Claim
39 words
The device of claim 1 wherein luminescent region contains a dopant selected from a group consisting of Cu, Cl, and Mn, and the photoconductive region contains a dopant selected from a group consisting of Cd, Ga, Cu, and Ag.
Claim 9
Dependent Claim
20 words
The device of claim 1 wherein the body has a thickness of from about 2000 A to about 3 microns.
Claim 10
Dependent Claim
30 words
The device of claim 1 wherein the means for inducing the generation of photons in the electroluminescent region are a pair of electrodes on opposite sides of the luminescent region.
Claim 11
Dependent Claim
25 words
The device of claim 1 wherein the means for receiving the photons in the photoconductive region are electrodes on opposite sides of the photoconductive region.
Claim 12
Dependent Claim
26 words
The device of claim 1 wherein the means for inducing the generation of an for receiving the photons are electrodes on opposite sides of the regions.
Claim 13
Dependent Claim
19 words
The device of claim 1 wherein the electroluminescent and photoconductive regions are separated by a distance of 1 mil.
Claim 14
Dependent Claim
131 words
An optoelectronic thin film device comprising a substrate of an insulating material; a body on the substrate and composed of semiconductor material of at least one compound selected from the group consisting of GaAs, GaP, InAs, InP, AlS, and GaAlS; the body having a pair of spaced regions containing a dopant of one of the n and p types and the body containing a dopant of the opposite type, the doped regions each forming p-n junctions the substantial portions of which are disposed in planes parallel to an axis extending between the regions, one of the regions being electroluminescent and the other region being photoconductive, both regions being in one surface of the body, a pair of electrodes affixed to the surface, and an electrode affixed to each of the regions.
Claim 15
Dependent Claim
23 words
The device of claim 15 wherein he body is doped with a p-type dopant and the regions are doped with an n-type dopant.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-12-05 | 1976-06-05 | 1976-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-12-05 | 1980-06-05 | 1980-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-12-05 | 1984-06-05 | 1984-12-05 | $7700.00 | Window Closed / Lapsed |