US3704427A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device for stimulating emission of radiation from a diode
Assignee: Siemens and Halske AG
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Filing: 1964-06-03
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Granted: 1972-11-28
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Expires: 1984-06-03
Abstract
Abstract A device for stimulated emission of radiation utilizes a semiconductor body having a plurality of transition layers of i conductivity type parallel to each other and having opposite edges. When the body is electrically excited to stimulate radiation by charge-carrier in the layers and radiation is applied to one corresponding edge of the layers, amplified coherent tightly bunched beams are emitted by the transition layers at the other corresponding edge thereof.
Inventors
- 👤 Walter Heywang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:47
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/50; H01S5/30; H01S5/40; H01S5/4006; H01S5/4025; H01S5/4031; H01S5/4043
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
91 words
In a device for stimulated emission of radiation from a diode in the form of a tightly bunched beam, a semiconductor body having a plurality of transition layers parallel to each other and having opposite edges; and electric excitation means connected to said body for stimulating radiation by charge-carrier in said layers, said transition layers emitting at one corresponding edge amplified coherent tightly bunched beams when coherent radiation is applied to the other corresponding edge of said layers, the beam issuing direction from said layers being substantially parallel to said layers.
Claim 2
Dependent Claim
91 words
In a device for stimulated emission of radiation from a diode in the form of a tightly bunched beam, a semiconductor body having a plurality of transition layers parallel to each other and having opposite edges; and electric excitation means connected to said body for stimulating radiation by charge-carrier in said layers, said transition layers emitting at one corresponding edge amplified coherent tightly bunched beams when coherent radiation is applied to the other corresponding edge of said layers, the beam issuing direction from said layers being substantially parallel to said layers.
Claim 3
Dependent Claim
113 words
In a device for stimulated emission of radiation from a diode in the form of a tightly bunched beam of not more than about 4 degrees divergence in at least one of the two coordinate directions perpendicular to the beam direction; a semiconductor body having a plurality of transition layers parallel to each other and having opposite edges; and electric excitation means connected to said body for stimulating radiation by charge-carrier in said layers, said transition layers emitting at one corresponding edge amplified coherent tightly bunched beams when coherent radiation is applied to the other corresponding edge of said layers, the beam issuing direction from said layers being substantially parallel to said layers.
Claim 4
Dependent Claim
113 words
In a device for stimulated emission of radiation from a diode in the form of a tightly bunched beam of not more than about 4 degrees divergence in at least one of the two coordinate directions perpendicular to the beam direction; a semiconductor body having a plurality of transition layers parallel to each other and having opposite edges; and electric excitation means connected to said body for stimulating radiation by charge-carrier in said layers, said transition layers emitting at one corresponding edge amplified coherent tightly bunched beams when coherent radiation is applied to the other corresponding edge of said layers, the beam issuing direction from said layers being substantially parallel to said layers.
Claim 5
Dependent Claim
180 words
In a device for stimulated emission of radiation from a diode in a tightly bunched beam, a semiconductor body having a plurality of transition layers substantially parallel to each other, said semiconductor body having top and bottom faces spaced from each other and substantially parallel to said layers and to each other, a first pair of sides spaced from each other and transverse to said top and bottom faces, and a second pair of sides spaced from each other and transverse to said top and bottom faces, each of said layers having one edge in one of the second pair of sides and an opposite edge in the other of said second pair of sides; and electric excitation means connected to one of the first pair of sides of said body For stimulating radiation by charge-carrier in said layers, said transition layers emitting at at least one of the second pair of sides amplified coherent tightly bunched beams in a direction substantially parallel to said layers when coherent radiation is applied to the other of said second pair of sides.
Claim 6
Dependent Claim
180 words
In a device for stimulated emission of radiation from a diode in a tightly bunched beam, a semiconductor body having a plurality of transition layers substantially parallel to each other, said semiconductor body having top and bottom faces spaced from each other and substantially parallel to said layers and to each other, a first pair of sides spaced from each other and transverse to said top and bottom faces, and a second pair of sides spaced from each other and transverse to said top and bottom faces, each of said layers having one edge in one of the second pair of sides and an opposite edge in the other of said second pair of sides; and electric excitation means connected to one of the first pair of sides of said body For stimulating radiation by charge-carrier in said layers, said transition layers emitting at at least one of the second pair of sides amplified coherent tightly bunched beams in a direction substantially parallel to said layers when coherent radiation is applied to the other of said second pair of sides.
Claim 7
Independent Claim
167 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of transition layers substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation to one of the first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said semiconductor body at one of the second pair of sides thereof to stimulate radiation in said layers in accordance with the injection-laser principle whereby radiation is emitted by said layers at the other of said first pair of sides of said semiconductor body.
Claim 8
Independent Claim
167 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of transition layers substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation to one of the first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said semiconductor body at one of the second pair of sides thereof to stimulate radiation in said layers in accordance with the injection-laser principle whereby radiation is emitted by said layers at the other of said first pair of sides of said semiconductor body.
Claim 9
Independent Claim
185 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of transition layers substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation substantially perpendicularly to one of the first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said semiconductor body at one of the second pair of sides thereof to stimulate radiation in said layers in accordance with the injection-laser principle whereby radia-tion coherent with the radiation supplied to said semicon-ductor body is emitted by said layers at the other of said first pair of sides thereof substantially parallel to said radiation supplied to said semiconductor body.
Claim 10
Independent Claim
185 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of transition layers substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation substantially perpendicularly to one of the first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said semiconductor body at one of the second pair of sides thereof to stimulate radiation in said layers in accordance with the injection-laser principle whereby radia-tion coherent with the radiation supplied to said semicon-ductor body is emitted by said layers at the other of said first pair of sides thereof substantially parallel to said radiation supplied to said semiconductor body.
Claim 11
Dependent Claim
38 words
A laser device as claimed in claim 4, wherein the radiation supplied to said semiconductor body is coherent with the radiation emitted by the layers of said semiconductor body and has the same frequency as the emitted radiation.
Claim 12
Dependent Claim
28 words
A laser device as claimed in claim 4, comprising diaphragm means positioned in the radiation emitted from the layers of said semiconductor body for concentrating said emitted radiation.
Claim 13
Independent Claim
188 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation to one of the first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said regions of said semiconductor body at one of the second paiR of sides thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at the other of said first pair of sides of said semiconductor body.
Claim 14
Independent Claim
188 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation to one of the first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said regions of said semiconductor body at one of the second paiR of sides thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at the other of said first pair of sides of said semiconductor body.
Claim 15
Dependent Claim
21 words
A laser device as claimed in claim 8, wherein said transition layers have a lower dopant concentration than the adjacent regions.
Claim 16
Dependent Claim
30 words
A laser device as claimed in claim 8, wherein said regions are of alternately n conductivity type and p conductivity type, and said transition layers are of i conductivity type.
Claim 17
Dependent Claim
25 words
A laser device as claimed in claim 8, wherein said regions have a high dopant concentration and said transition layers have a low dopant concentration.
Claim 18
Independent Claim
259 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation to one of the first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said regions of said semiconductor body at one of the second pair of sides thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at the other of said first pair of sides of said semiconductor body, said electric excitation means comprising a source of direct-current voltage having a positive pole and a negative pole, first electrical conducting means connecting the negative pole of said voltage source to odd numbered ones of said regions counting from the top face of said semiconductor body, and second electrical conducting means connecting the positive pole of said voltage source to even numbered ones of said regions counting from said top face.
Claim 19
Independent Claim
259 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation to one of the first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said regions of said semiconductor body at one of the second pair of sides thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at the other of said first pair of sides of said semiconductor body, said electric excitation means comprising a source of direct-current voltage having a positive pole and a negative pole, first electrical conducting means connecting the negative pole of said voltage source to odd numbered ones of said regions counting from the top face of said semiconductor body, and second electrical conducting means connecting the positive pole of said voltage source to even numbered ones of said regions counting from said top face.
Claim 20
Dependent Claim
49 words
A device as claimed in claim 12, wherein said regions are alternately of n conductivity type and p conductivity type and wherein said first electrical conducting means is connected to regions of n conductivity type and said second electrical conducting means is connected to regions of p conductivity type.
Claim 21
Independent Claim
220 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of transition layers substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation to one of the first pair of sides of said semiconductor body, said auxiliary means comprising a laser diode means positioned to direct coherent radiation substantially parallel to said transition layers to said one of said first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said semiconductor body at one of the second pair of sides thereof to stimulate radiation in said layers in accordance with the injection-laser principle whereby radiation is emitted by said layers at the other of said first pair of sides of said semiconductor body, the radiation supplied to said semiconductor body being in phase with the radiation emitted by tHe layers of said semiconductor body.
Claim 22
Independent Claim
220 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of transition layers substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation to one of the first pair of sides of said semiconductor body, said auxiliary means comprising a laser diode means positioned to direct coherent radiation substantially parallel to said transition layers to said one of said first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said semiconductor body at one of the second pair of sides thereof to stimulate radiation in said layers in accordance with the injection-laser principle whereby radiation is emitted by said layers at the other of said first pair of sides of said semiconductor body, the radiation supplied to said semiconductor body being in phase with the radiation emitted by tHe layers of said semiconductor body.
Claim 23
Independent Claim
237 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation to one of the first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said semiconductor body at the top and bottom faces thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at the other of said first pair of sides of said semiconductor body, said electric excitation means comprising a source of alternating current voltage having two terminals, first electrical conducting means connecting one terminal of said voltage source to the top face of said semiconductor body, and second electrical conducting means connecting the other terminal of said voltage source to the bottom face of said semiconductor body.
Claim 24
Independent Claim
237 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; auxiliary means for supplying radiation to one of the first pair of sides of said semiconductor body; and electric excitation means for supplying electric currents to said semiconductor body at the top and bottom faces thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at the other of said first pair of sides of said semiconductor body, said electric excitation means comprising a source of alternating current voltage having two terminals, first electrical conducting means connecting one terminal of said voltage source to the top face of said semiconductor body, and second electrical conducting means connecting the other terminal of said voltage source to the bottom face of said semiconductor body.
Claim 25
Independent Claim
181 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of transition layers substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; self-excitation means positioned in operative proximity with each of the first pair of sides of said semiconductor body for providing self-excitation thereof; and electric excitation means for supplying electric currents to said semiconductor body at one of the second pair of sides thereof to stimulate radiation in said layers in accordance with the injection-laser principle whereby radiation is emitted by said layers at both of said first sides of said semiconductor body and is reflected back to said semiconductor body by said self-excitation means.
Claim 26
Independent Claim
181 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of transition layers substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; self-excitation means positioned in operative proximity with each of the first pair of sides of said semiconductor body for providing self-excitation thereof; and electric excitation means for supplying electric currents to said semiconductor body at one of the second pair of sides thereof to stimulate radiation in said layers in accordance with the injection-laser principle whereby radiation is emitted by said layers at both of said first sides of said semiconductor body and is reflected back to said semiconductor body by said self-excitation means.
Claim 27
Independent Claim
202 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; self-excitation means positioned in operative proximity with each of the first pair of sides of said semiconductor body for providing self-excitation thereof; and electric excitation means for supplying electric currents to said regions of said semiconductor body at one of the second pair of sides thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at both of said first sides of said semiconductor body and is reflected back to said semiconductor body by said self-excitation means.
Claim 28
Independent Claim
202 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; self-excitation means positioned in operative proximity with each of the first pair of sides of said semiconductor body for providing self-excitation thereof; and electric excitation means for supplying electric currents to said regions of said semiconductor body at one of the second pair of sides thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at both of said first sides of said semiconductor body and is reflected back to said semiconductor body by said self-excitation means.
Claim 29
Independent Claim
273 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; self-excitation means positioned in operative proximity with each of the first pair of sides of said semiconductor body for providing self-excitation thereof; and electric excitation means for supplying electric currents to said regions of said semiconductor body at one of the second pair of sides thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at both of said first sides of said semiconductor body and is reflected back to said semiconductor body by said self-excitation means, said electric excitation means comprising a source of direct-current voltage having a positive pole and a negative pole, first electrical conducting means connecting the negative pole of said voltage source to odd numbered ones of said regions counting from the top face of said semiconductor body, and second electrical conducting means connecting the positive pole of said voltage source to even numbered ones of said regions counting from said top face.
Claim 30
Independent Claim
273 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; self-excitation means positioned in operative proximity with each of the first pair of sides of said semiconductor body for providing self-excitation thereof; and electric excitation means for supplying electric currents to said regions of said semiconductor body at one of the second pair of sides thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at both of said first sides of said semiconductor body and is reflected back to said semiconductor body by said self-excitation means, said electric excitation means comprising a source of direct-current voltage having a positive pole and a negative pole, first electrical conducting means connecting the negative pole of said voltage source to odd numbered ones of said regions counting from the top face of said semiconductor body, and second electrical conducting means connecting the positive pole of said voltage source to even numbered ones of said regions counting from said top face.
Claim 31
Dependent Claim
49 words
A device as claimed in claim 18, wherein said regions are alternately of n conductivity type and p conductivity type and wherein said first electrical conducting means is connected to regions of n conductivity type and said second electrical conducting means is connected to regions of p conductivity type.
Claim 32
Independent Claim
242 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; self-excitation means positioned in operative proximity with each of the first pair of sides of said semiconductor body for providing self-excitation thereof; and electric excitation means for supplying electric currents to said semiconductor body at the top and bottom faces thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at the other of said first pair of sides of said semiconductor body, said electric excitation means comprising a source of alternating current voltage having two terminals, first electrical conducting means connecting one terminal of said voltage source to the top face of said semiconductor body, and second electrical conducting means connecting the other terminal of said voltage source to the bottom face of said semiconductor body.
Claim 33
Independent Claim
242 words
A device for stimulated emission of radiation from a diode in a tightly bunched beam, comprising a semiconductor body having a plurality of regions of alternate opposite conductivity type and transition layers interposed between respective adjacent regions of opposite conductivity type, said regions and transition layers being substantially parallel to each other, said semiconductor body having a substantially block configuration with top and bottom faces spaced from each other and substantially parallel to said layers and to each other and with a first pair of spaced substantially parallel sides perpendicular to said top and bottom faces and a second pair of spaced substantially parallel sides perpendicular to said first pair of sides and to said top and bottom faces; self-excitation means positioned in operative proximity with each of the first pair of sides of said semiconductor body for providing self-excitation thereof; and electric excitation means for supplying electric currents to said semiconductor body at the top and bottom faces thereof to stimulate radiation in the transition layers whereby radiation is emitted by said transition layers at the other of said first pair of sides of said semiconductor body, said electric excitation means comprising a source of alternating current voltage having two terminals, first electrical conducting means connecting one terminal of said voltage source to the top face of said semiconductor body, and second electrical conducting means connecting the other terminal of said voltage source to the bottom face of said semiconductor body.
Claim 34
Dependent Claim
19 words
In a device as claimed in claim 1, wherein each of said transition layers is of i conductivity type.
Claim 35
Dependent Claim
19 words
In a device as claimed in claim 3, wherein each of said transition layers is of i conduCtivity type.
Claim 36
Dependent Claim
136 words
A semiconductor device comprising: a stack of layers of semiconductor material, each of said layers being of a conductivity type opposite to that of an adjacent layer in said stack, said layers forming at least three substantially parallel, PN junctions, said stack having a pair of opposite ends which are substantially only light-transmitting, and a pair of electrical contact means on a pair of opposite surfaces, respectively, of said stack, substantially parallel to said PN junctions for sending current through said stack, whereby to cause alternate ones of said PN junctions to be forward biased by current of predetermined amplitude in one direction and to produce a region of population inversion and stimulated emission of radiation adjacent each forward-biased, PN junction whereby said semiconductor device may function as an amplifier of light directed through said ends.
Claim 37
Dependent Claim
136 words
A semiconductor device comprising: a stack of layers of semiconductor material, each of said layers being of a conductivity type opposite to that of an adjacent layer in said stack, said layers forming at least three substantially parallel, PN junctions, said stack having a pair of opposite ends which are substantially only light-transmitting, and a pair of electrical contact means on a pair of opposite surfaces, respectively, of said stack, substantially parallel to said PN junctions for sending current through said stack, whereby to cause alternate ones of said PN junctions to be forward biased by current of predetermined amplitude in one direction and to produce a region of population inversion and stimulated emission of radiation adjacent each forward-biased, PN junction whereby said semiconductor device may function as an amplifier of light directed through said ends.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-11-28 | 1976-05-29 | 1976-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-11-28 | 1980-05-29 | 1980-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-11-28 | 1984-05-29 | 1984-11-28 | $7700.00 | Window Closed / Lapsed |