US3704384A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic capacitor structure
Assignee: International Business Machines Corp
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Filing: 1971-03-30
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Granted: 1972-11-28
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Expires: 1991-03-30
Abstract
Abstract This specification discloses a polarized capacitor for use in monolithic structures, particularly those using field effect transistors. One plate of this capacitor is a metal layer overlying and insulated from a semiconductor body which has a diffusion in it adjacent to the overlying metal layer. The boundaries of this diffusion form a rectifying junction with the rest of the semiconductor body. When a voltage is applied between the metal layer and the diffusion an electric field is formed under the layer and adjacent to the diffusion so as to create an inversion layer which forms with the diffusion the second plate of the capacitor.
Inventors
- 👤 Roy R Desimone
- 👤 Richard H Linton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:05
CPC Classifications
H; H10; H10P; H10P95/00; H10B; H10B12/00; H10D; H10D84/00; H10D99/00
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
242 words
In a two terminal capacitor a structure comprising: a body of semiconductor material of one polarity; two zones of the other polarity in said body which extend to one surface of the body and form a rectifying junction along the boundaries of said zones in said body so as to form the source and drain of a field effect transistor; a first thin insulation area over the body in the portion between the two zones to form the insulation on the gate of the field effect transistor; a second thin insulation layer over another portion of said surface in a second area of the body adjacent one of said zones and where said body is of said one polarity to form the dielectric of the capacitor; a first conductive layer over the first thin insulation layer to form the gate of the field effect transistor; a second conductive layer over said second thin insulation layer to form the first plate of the capacitor; voltage means for applying a potential of the other polarity to the portion of the body which is of the one polarity; and means for applying an electrical potential between the zone of the other polarity and said conductive layer to draw charge from said voltage means to set up a charge layer under the conductive layer to neutralize a portion of the rectifying junction and with the zone of other polarity form the other plate of the capacitor.
Claim 2
Dependent Claim
242 words
In a two terminal capacitor a structure comprising: a body of semiconductor material of one polarity; two zones of the other polarity in said body which extend to one surface of the body and form a rectifying junction along the boundaries of said zones in said body so as to form the source and drain of a field effect transistor; a first thin insulation area over the body in the portion between the two zones to form the insulation on the gate of the field effect transistor; a second thin insulation layer over another portion of said surface in a second area of the body adjacent one of said zones and where said body is of said one polarity to form the dielectric of the capacitor; a first conductive layer over the first thin insulation layer to form the gate of the field effect transistor; a second conductive layer over said second thin insulation layer to form the first plate of the capacitor; voltage means for applying a potential of the other polarity to the portion of the body which is of the one polarity; and means for applying an electrical potential between the zone of the other polarity and said conductive layer to draw charge from said voltage means to set up a charge layer under the conductive layer to neutralize a portion of the rectifying junction and with the zone of other polarity form the other plate of the capacitor.
Claim 3
Dependent Claim
23 words
The structure of claim 1 wherein said one of the diffusions is the source diffusion for the juxtaposed insulated gate field effect transistor.
References Cited (Backward Citations)
US3621347A
Cited
US3560815A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-11-28 | 1976-05-29 | 1976-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-11-28 | 1980-05-29 | 1980-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-11-28 | 1984-05-29 | 1984-11-28 | $7700.00 | Window Closed / Lapsed |