Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
127 words
A device for generating microwave oscillations comprising two semiconductor devices of a kind capable of being switched between two states or becoming unstable or exhibiting negative resistance when exposed to a dc voltage field or a dc current exceeding a given threshold value, a microwave resonant cavity, and a dc bias voltage source, said two semiconductor devices being mounted within said resonant cavity and connected in series between the terminals of said bias voltage source, and microwave coupling means coupling the common junction point between said semiconductor devices to the microwave field of said resonant cavity so that said two semiconductor devices are driven in pushpull by ac microwave voltages derived from said resonant cavity and superimposed upon dc bias voltages derived from said bias voltage source.
Claim 2
Independent Claim
127 words
A device for generating microwave oscillations comprising two semiconductor devices of a kind capable of being switched between two states or becoming unstable or exhibiting negative resistance when exposed to a dc voltage field or a dc current exceeding a given threshold value, a microwave resonant cavity, and a dc bias voltage source, said two semiconductor devices being mounted within said resonant cavity and connected in series between the terminals of said bias voltage source, and microwave coupling means coupling the common junction point between said semiconductor devices to the microwave field of said resonant cavity so that said two semiconductor devices are driven in pushpull by ac microwave voltages derived from said resonant cavity and superimposed upon dc bias voltages derived from said bias voltage source.
Claim 3
Dependent Claim
13 words
A device as claimed in claim 1, wherein said semiconductor devices are Gunn-diodes.
Claim 4
Dependent Claim
14 words
A device as claimed in claim 1, wherein said semiconductor devices are avalanche diodes.
Claim 5
Dependent Claim
22 words
A device as claimed in claim 1, wherein said two semiconductor devices are matched to have substantially equally large dc voltage fields.
Claim 6
Dependent Claim
25 words
A device as claimed in claim 1, comprising circuit means for determining the dc potential of the common junction point between said two semiconductor devices.
Claim 7
Dependent Claim
40 words
A device as claimed in claim 5, wherein said circuit means include a dc voltage divider connected between the terminals of said dc bias voltage source and having a tap connected to said common junction point between said semiconductor devices.
Claim 8
Dependent Claim
38 words
A device as claimed in claim 1, wherein said dc bias voltages and the Q-value of said resonant cavity are sufficiently high to prevent travelling high-field domains in said semiconductor devices from growing and determining the oscillation mode.
Claim 9
Dependent Claim
38 words
A device as claimed in claim 1, wherein said microwave resonant cavity includes a waveguide section provided with tuning means, said semiconductor devices being mounted adjacent each other on the inside of the wall in said waveguide section.
Claim 10
Dependent Claim
36 words
A device as claimed in claim 8, wherein said microwave coupling means include antenna means connected to the common junction point between said semiconductor dEvices and coupled to the electromagnetic microwave field within said waveguide section.
Claim 11
Dependent Claim
65 words
A device as claimed in claim 1, wherein said microwave resonant cavity includes a coaxial cavity having an outer tubular conductor terminated at one end of the cavity by a short-circuiting end wall and an inner central conductor terminated at a short distance from said end wall, said two semiconductor devices being mounted on the inner surface of said end wall opposite said central conductor.
Claim 12
Dependent Claim
29 words
A device as claimed in claim 9, wherein said microwave coupling means include a galvanic connection from the common junction point between said semiconductor devices to said central conductor.
Claim 13
Dependent Claim
33 words
A device as claimed in claim 1, comprising at least one additional pair of semiconductor devices arranged in a manner similar to that of said two first mentioned semiconductor devices and microwave-coupled thereto.
Claim 14
Dependent Claim
37 words
A device as claimed in claim 1, wherein said two semiconductor devices are formed by planar-technique in a common semiconductor wafer as a monolithic component with three electrodes, one of said electrodes constituting said common junction point.