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US3702977A Expired / Lapsed US ⏱️ 0.0 years remaining

Device for generating microwave oscillations

Assignee: Individual
•
Filing: 1971-10-28
•
Granted: 1972-11-14
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Expires: 1991-10-28
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Abstract

Abstract A microwave oscillator including two semiconductor devices of a kind which can be switched between two state or which becomes unstable or exhibits negative resistance under the effect of an external electric field exceeding a given threshold value. The two semiconductor devices are mounted within a microwave resonant cavity and are connected in series between the poles of a dc bias voltage source. The common junction point between the semiconductor devices is ac-coupled to the microwave cavity so that the semiconductor devices are driven in push-pull by the ac microwave voltages derived from the microwave cavity and superimposed upon the dc bias voltages from the voltage source. The semiconductor devices may be Gunn-diodes or avalanche diodes. The microwave resonator cavity may consist of a waveguide section provided with tuning devices or a coaxial cavity closed at one end by an end wall.

Inventors

  • 👤 Kjell Olow Ingemar Olsson

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 18:25
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H03B9/14; H03B9/143

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 127 words
A device for generating microwave oscillations comprising two semiconductor devices of a kind capable of being switched between two states or becoming unstable or exhibiting negative resistance when exposed to a dc voltage field or a dc current exceeding a given threshold value, a microwave resonant cavity, and a dc bias voltage source, said two semiconductor devices being mounted within said resonant cavity and connected in series between the terminals of said bias voltage source, and microwave coupling means coupling the common junction point between said semiconductor devices to the microwave field of said resonant cavity so that said two semiconductor devices are driven in pushpull by ac microwave voltages derived from said resonant cavity and superimposed upon dc bias voltages derived from said bias voltage source.
Claim 2
Independent Claim 127 words
A device for generating microwave oscillations comprising two semiconductor devices of a kind capable of being switched between two states or becoming unstable or exhibiting negative resistance when exposed to a dc voltage field or a dc current exceeding a given threshold value, a microwave resonant cavity, and a dc bias voltage source, said two semiconductor devices being mounted within said resonant cavity and connected in series between the terminals of said bias voltage source, and microwave coupling means coupling the common junction point between said semiconductor devices to the microwave field of said resonant cavity so that said two semiconductor devices are driven in pushpull by ac microwave voltages derived from said resonant cavity and superimposed upon dc bias voltages derived from said bias voltage source.
Claim 3
Dependent Claim 13 words
A device as claimed in claim 1, wherein said semiconductor devices are Gunn-diodes.
Claim 4
Dependent Claim 14 words
A device as claimed in claim 1, wherein said semiconductor devices are avalanche diodes.
Claim 5
Dependent Claim 22 words
A device as claimed in claim 1, wherein said two semiconductor devices are matched to have substantially equally large dc voltage fields.
Claim 6
Dependent Claim 25 words
A device as claimed in claim 1, comprising circuit means for determining the dc potential of the common junction point between said two semiconductor devices.
Claim 7
Dependent Claim 40 words
A device as claimed in claim 5, wherein said circuit means include a dc voltage divider connected between the terminals of said dc bias voltage source and having a tap connected to said common junction point between said semiconductor devices.
Claim 8
Dependent Claim 38 words
A device as claimed in claim 1, wherein said dc bias voltages and the Q-value of said resonant cavity are sufficiently high to prevent travelling high-field domains in said semiconductor devices from growing and determining the oscillation mode.
Claim 9
Dependent Claim 38 words
A device as claimed in claim 1, wherein said microwave resonant cavity includes a waveguide section provided with tuning means, said semiconductor devices being mounted adjacent each other on the inside of the wall in said waveguide section.
Claim 10
Dependent Claim 36 words
A device as claimed in claim 8, wherein said microwave coupling means include antenna means connected to the common junction point between said semiconductor dEvices and coupled to the electromagnetic microwave field within said waveguide section.
Claim 11
Dependent Claim 65 words
A device as claimed in claim 1, wherein said microwave resonant cavity includes a coaxial cavity having an outer tubular conductor terminated at one end of the cavity by a short-circuiting end wall and an inner central conductor terminated at a short distance from said end wall, said two semiconductor devices being mounted on the inner surface of said end wall opposite said central conductor.
Claim 12
Dependent Claim 29 words
A device as claimed in claim 9, wherein said microwave coupling means include a galvanic connection from the common junction point between said semiconductor devices to said central conductor.
Claim 13
Dependent Claim 33 words
A device as claimed in claim 1, comprising at least one additional pair of semiconductor devices arranged in a manner similar to that of said two first mentioned semiconductor devices and microwave-coupled thereto.
Claim 14
Dependent Claim 37 words
A device as claimed in claim 1, wherein said two semiconductor devices are formed by planar-technique in a common semiconductor wafer as a monolithic component with three electrodes, one of said electrodes constituting said common junction point.

References Cited (Backward Citations)

US3231831A Cited
US3509478A Cited
US3550035A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1975-11-14 1976-05-15 1976-11-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1979-11-14 1980-05-15 1980-11-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1983-11-14 1984-05-15 1984-11-14 $7700.00 Window Closed / Lapsed

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