US3702790A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic integrated circuit device and method of manufacturing the same
Assignee: NEC Corp
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Filing: 1969-11-26
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Granted: 1972-11-14
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Expires: 1989-11-26
Abstract
Abstract SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE IS DISCLOSED IN WHICH A PLURALITY OF SINGLE CRYSTAL REGIONS OF ONE CONDUCTIVITY TYPE ARE FORMED ON A MAJOR SURFACE OF A SUBSTRATE OF AN OPPOSITE CONDUCTIVITY TYPE. A POLYCRYSTAL ISOLATION REGION IS FORMED ON THAT SURFACE IN DIRECT CONTACT WITH THE SUBSTRATE AND SURROUNDS THE SINGLE CRYSTAL REGIONS. ALSO DISCLOSED ARE SEVERAL METHODS FOR FABRICATING THAT INTEGRATED CIRCUIT DEVICE.
Inventors
- 👤 Sho Nakanuma
- 👤 Toshio Wada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:11
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/085; Y10S148/096; Y10S148/122; Y10S148/167; Y10S438/00; Y10S438/969
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-11-14 | 1976-05-15 | 1976-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-11-14 | 1980-05-15 | 1980-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-11-14 | 1984-05-15 | 1984-11-14 | $7700.00 | Window Closed / Lapsed |