US3702786A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mos transistor with aluminum oxide gate dielectric
Assignee: RCA Corp
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Filing: 1970-10-28
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Granted: 1972-11-14
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Expires: 1990-10-28
Abstract
Abstract A METHOD OF MAKING AN MOS TRANSISTOR HAVING A FILM OF AL2O3 AS ITS GATE ELECTRODE INSULATOR, COMPRISING DEPOSITING THE OXIDE BY A VAPOR DEPOSITION PROCESS, THEN HEATING THE DEPOSITED FILM AT A TEMPERATURE OF ABOVE ABOUT 700*C. IN A WET GAS ATMOSPHERE.
Inventors
- 👤 Michael Thomas Duffy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10D; H10D99/00; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-11-14 | 1976-05-15 | 1976-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-11-14 | 1980-05-15 | 1980-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-11-14 | 1984-05-15 | 1984-11-14 | $7700.00 | Window Closed / Lapsed |