US3701931A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gold tantalum-nitrogen high conductivity metallurgy
Assignee: International Business Machines Corp
•
Filing: 1971-05-06
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Granted: 1972-10-31
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Expires: 1991-05-06
Abstract
Abstract A high conductivity metallurgy interconnection system for semiconductor devices is formed of laminar stripes having a film of gold disposed between films of tantalum-nitrogen.
Inventors
- 👤 Martin Revitz
- 👤 James M Thompson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 05:41
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10P; H10P95/00; H10W20/44; H10W20/4403; H10W20/4432; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12389; Y10T428/12396; Y10T428/12493; Y10T428/12528; Y10T428/12535; Y10T428/12576; Y10T428/12611; Y10T428/12674; Y10T428/12771; Y10T428/12861; Y10T428/12889
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
20 words
The semiconductor device of claim 1 in which a second layer of tantalum-nitrogen is deposited on said layer of gold.
Claim 2
Dependent Claim
12 words
A device according to claim 1 in which said substrate is silicon.
Claim 3
Dependent Claim
14 words
The device according to claim 3 in which said insulating layer is silicon dioxide.
Claim 4
Dependent Claim
14 words
The device according to claim 3 in which said insulating layer is silicon nitride.
References Cited (Backward Citations)
CA791343A
Cited
US3544311A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-31 | 1976-05-01 | 1976-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-31 | 1980-05-01 | 1980-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-31 | 1984-05-01 | 1984-10-31 | $7700.00 | Window Closed / Lapsed |