US3701050A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state microwave oscillating device
Assignee: Panasonic Holdings Corp
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Filing: 1971-04-21
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Granted: 1972-10-24
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Expires: 1991-04-21
Abstract
Abstract The present invention provides a device for producing microwave oscillations which generally comprises a solid state oscillating element and a cavity resonator, said element comprising a semiconductor substrate with a metal layer thereon and a rectifying junction formed therebetween. An electric potential is impressed on the depletion layer of the rectifying junction in the backward direction, thus producing microwave oscillations.
Inventors
- 👤 Hiroyuki Mizuno
- 👤 Shinichi Nakashima
- 👤 Yukio Miyai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:59
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
139 words
A solid state microwave oscillating device comprising an oscillating element and a cavity resonator electromagnetically coupled with said oscillating element, said element comprising a semiconductor substrate containing an impurity in the concentration of 1 X 1016 to 1 X 1018 atoms/cm3 and a metal layer provided on said substrate, a rectifying junction being formed between said substrate and said metal layer, said junction having such a backward breakdown characterisTic as to be expressed by formula where VB1 is the backward voltage at a corresponding to the backward current density of 1 A/cm2 and VB2 is the backward voltage at a point corresponding to the backward current density of 10 A/cm2, said device further comprising means for impressing a backward voltage on said junction so as to yield a backward current in the current density not less than 25 A/cm2.
Claim 2
Dependent Claim
139 words
A solid state microwave oscillating device comprising an oscillating element and a cavity resonator electromagnetically coupled with said oscillating element, said element comprising a semiconductor substrate containing an impurity in the concentration of 1 X 1016 to 1 X 1018 atoms/cm3 and a metal layer provided on said substrate, a rectifying junction being formed between said substrate and said metal layer, said junction having such a backward breakdown characterisTic as to be expressed by formula where VB1 is the backward voltage at a corresponding to the backward current density of 1 A/cm2 and VB2 is the backward voltage at a point corresponding to the backward current density of 10 A/cm2, said device further comprising means for impressing a backward voltage on said junction so as to yield a backward current in the current density not less than 25 A/cm2.
Claim 3
Dependent Claim
16 words
A solid state microwave oscillating device according to claim 1 in which said substrate is germanium.
Claim 4
Dependent Claim
21 words
A solid state microwave oscillating device according to claim 1 wherein said substrate is no greater than 1 mm in thickness.
References Cited (Backward Citations)
US2914665A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-24 | 1976-04-24 | 1976-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-24 | 1980-04-24 | 1980-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-24 | 1984-04-24 | 1984-10-24 | $7700.00 | Window Closed / Lapsed |