US3700507A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making complementary insulated gate field effect transistors
Assignee: RCA Corp
•
Filing: 1969-10-21
•
Granted: 1972-10-24
•
Expires: 1989-10-21
Abstract
Abstract THE SOURCE AND DRAIN REGIONS AND THE CHANNEL INSULATION OF TWO COMPLEMENTARY FIELD EFFECT TRANSISTORS ARE DIFFUSED SIMULTANEOUSLY DURING A SINGLE HEAT TREATMENT SO AS TO REDUCE THE NUMBER OF HEAT TREATMENT STEPS REQUIRED TO MAKE THE DEVICE. THE METHOD MAY ALSO INCLUDE DIFFUSING THE WELL REGION FOR ONE OF THE FIELD EFFECT TRANSISTORS DURING THE SAME HEAT TREATMENT STEP THAT THE SOURCE AND DRAIN REGIONS ARE DIFFUSED AND THE CHANNEL INSULATION IS FORMED SO AS TO FURTHER REDUCE THE NUMBER OF HEAT TREATMENT STEPS.
Inventors
- 👤 Lawrence Aloysius Murray
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:42
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/017; H10D84/02; H10D84/03; H10D84/038; Y; Y10; Y10S; Y10S148/00; Y10S148/03; Y10S148/043; Y10S148/053; Y10S148/106; Y10S148/126; Y10S148/151
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-24 | 1976-04-24 | 1976-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-24 | 1980-04-24 | 1980-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-24 | 1984-04-24 | 1984-10-24 | $7700.00 | Window Closed / Lapsed |