US3699404A
Expired / Lapsed
US
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Negative effective electron affinity emitters with drift fields using deep acceptor doping
Assignee: Burle Technologies Inc
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Filing: 1971-02-24
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Granted: 1972-10-17
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Expires: 1991-02-24
Abstract
Abstract An electron emitter comprising a body of gallium phosphide having a thin surface layer of cesium. The gallium phosphide is doped with a deep acceptor such as iron. Interaction between the cesium layers and the semiconductor surface results in ionization of the deep acceptor impurities in a small region near the surface. The ionization of deep acceptors at the cesiated surface results in a graded concentration of ionized impurities through the gallium phosphide layer, which establishes an internal electric field for impelling electrons toward the cesiated emitting surface.
Inventors
- 👤 Ralph E Simon
- 👤 Brown F Williams
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 01:27
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/32; Y; Y10; Y10S; Y10S148/00; Y10S148/119; Y10S148/122; Y10S148/15
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
24 words
The emitter defined in claim 1 wherein said work function reducing material comprises a material selected from the group consisting of cesium and oxygen.
Claim 2
Dependent Claim
12 words
The emitter defined in claim 1 wherein said semiconductor is gallium phosphide.
Claim 3
Dependent Claim
27 words
The emitter defined in claim 3 wherein said acceptor impurity comprises iron and said concentration is on the order of 1017 to 1018 atoms per cubic centimeter.
Claim 4
Dependent Claim
35 words
The emitter defined in claim 1 comprising a potential barrier region adjacent a surface of said body opposite said emitter surface, for preventing diffusion of electrons away from said emitter surface toward said opposite surface.
Claim 5
Dependent Claim
34 words
The emitter defined in claim 1 wherein said barrier region comprises a P region having a thickness substantially less than the thickness of said semiconductor body between said emitter surface and said opposite surface.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-17 | 1976-04-17 | 1976-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-17 | 1980-04-17 | 1980-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-17 | 1984-04-17 | 1984-10-17 | $7700.00 | Window Closed / Lapsed |