Process for forming monocrystalline and poly
Abstract
Abstract A METHOD WHEREIN AN AMORPHOUS MATERIAL IS INITIALLY DEPOSITED ON A MONOCRYSTALLINE SUBSTRATE AND WHEREIN SUBSEQUENTLY SELECTED PORTIONS OF THE AMORPHOUS LAYER ARE REMOVED TO EXPOSE PORTIONS OF THE SURFACE OF THE MONOCRYSTALLINE SUBSTRATE. A THIN LAYER OF A POLYCRYSTALLINE SEMICONDUCTOR MATERIAL IS DEPOSITED OVER THE WHOLE WAFER. THE REMAINING PORTIONS OF THE AMROPHOUS LAYER ARE REMOVED INCLUDING THE OVERLYING POLYCRYSTALLINE MATERIAL. A LAYER OF SEMICONDUCTOR MATERIAL IS DEPOSITED ON THE SUBSTRATE UNDER EPITAXIAL GROWTH CONDITIONS WHICH WILL FORM POLYCRYSTALLINE MATERIAL OVER THE REMAINING POLYCRYSTALLINE REGIONS AND EPITAXIAL MATERIAL OVER THE EXPOSED MONOCRYSTALLINE REGIONS OF THE SUBSTRATE.
Inventors
- 👤 Bernard M Kemlage
- 👤 Hans B Pogge
Bibliographic Details
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