Method of coating pn junction of semiconductor device with mixture of sio2 and tio2
Abstract
Abstract A SEMICONDUCTOR DEVICE WITH AT LEAST ONE PN JUNCTION AND A METHOD OF MANUFACTURING THE SAME WHEREIN A PASSIVATING FILM OR A SURFACE FILM FOR INSULATION IS MADE OF A CHEMICAL MIXTURE OF OXIDES COMPOSED OF SIO2-TIO2 SO THAT THE BREAKDOWN VOLTAGE AND ELECTRICAL STABILITY OF SAID PN JUNCTION CAN BE INCREASED. THIS EFFECT IS BASED ON THE SUPPRESSION OF MOVEMENT OF ALKALI IONS IN SAID FILM WITH THE MIXTURE OF OXIDES. THE FILM WITH THE MIXTURE OF OXIDES COMPOSED OF SIO2-TIO2 IS OBTAINED WITH A METHOD WHERE VAPORS OF ORGANO-OXY-SILICON COMPOUND AND ORGANO-OXY-TITANIUM COMPOUND ARE LED INTO A SUBSTRATE, WHICH IS HEATED AND SUSTAINED AT A PREDETERMINED TEMPERATURE, AND PYROLIZED ON A SURFACE OF THE SUBSTRATE TO MAKE THE FILM.
Inventors
- 👤 Masami Yokozawa
- 👤 Hitoo Iwasa
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
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