US3698071A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and device employing high resistivity aluminum oxide film
Assignee: Texas Instruments Inc
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Filing: 1968-02-19
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Granted: 1972-10-17
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Expires: 1988-02-19
Abstract
Abstract This invention record discloses an improvement in a method for forming aluminum oxide films characterized by being formed from trimethyl aluminum and nitrous oxide at a reaction temperature of 600*-900*C. The films are deposited over components formed in a semiconductor material. By this means a special high resistivity insulating film is formed and a shallow region of P-type conductivity is induced at the surface of the semiconductor material. Also disclosed are electronic devices employing the high resistivity aluminum oxide film.
Inventors
- 👤 Lou H Hall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 03:25
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; C; C01; C01F; C01F7/00; C01F7/02; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/403; H10D; H10D99/00; H10P; H10P95/00; H10W72/00; H10W72/90; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/531; H10W72/536; H10W72/541; H10W72/547; H10W72/59
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
93 words
In a method of forming an electronic device the improvement cOmprising: a. forming a semiconductor component at a surface of a semiconductor body, b. contacting said component and said surface with a mixture of trimethyl aluminum and nitrous oxide at 600- 900* C whereby a high resistivity insulating film of aluminum oxide is formed and a shallow region of P-type conductivity is induced at said surface, c. opening apertures in said aluminum oxide film over selected regions of said component, and body, d. affixing ohmic contacts through said apertures to said selected regions.
Claim 2
Dependent Claim
53 words
The method of claim 2 wherein said trimethyl aluminum and said nitrous oxide are gaseous reactants and admixed with an inert carrier gas, said aluminum oxide film is formed at a flow rate of gaseous reactants and carrier gas of about 200 cc per minute, and a temperature of 600*-700* C is employed.
Claim 3
Dependent Claim
54 words
The method of claim 2 wherein said trimethyl aluminum and said nitrous oxide are gaseous reactants and admixed with an inert carrier gas, said aluminum oxide film is formed at a flow rate of about 4,000 cc per minute of said gaseous reactants and carrier gas, and a temperature of 600*-900* C is employed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-17 | 1976-04-17 | 1976-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-17 | 1980-04-17 | 1980-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-17 | 1984-04-17 | 1984-10-17 | $7700.00 | Window Closed / Lapsed |