US3697338A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor devices
Assignee: Hitachi Ltd
•
Filing: 1971-02-17
•
Granted: 1972-10-10
•
Expires: 1991-02-17
Abstract
Abstract A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES BY SOLID-SOLID DIFFUSION WHEREIN A GROUP III-VI COMPOUND SUCH AS GA2S3, AL2S3 ETC. IS DEPOSITED ON A SUBSTRATE OF A GROUP III-V COMPOUND SEMICONDUCTOR SUCH AS GAAS, GAP, ETC., AND THE GROUP VI ELEMENT IS DIFFUSED INTO THE GROUP III-IV COMPOUND SEMICONDUCTOR.
Inventors
- 👤 Shojiro Asai
- 👤 Motohisa Hirao
- 👤 Eiichi Maruyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:51
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/17; H10P32/174; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/022; Y10S148/043; Y10S148/118; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-10 | 1976-04-10 | 1976-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-10 | 1980-04-10 | 1980-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-10 | 1984-04-10 | 1984-10-10 | $7700.00 | Window Closed / Lapsed |