US3697334A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device for and method of manufacturing the same
Assignee: Hitachi Ltd
•
Filing: 1967-08-30
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Granted: 1972-10-10
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Expires: 1987-08-30
Abstract
Abstract A SEMICONDUCTOR DEVICE COMPRISING A SILICON SUBSTRATE AN INSULATING FILM CONTAINING SILICON OXIDE AND PHOSPHORUS OXIDE WHICH IS FORMED ON THE SURFACE OF SAID SILICON SUBSTRATE, AND A PROTECTIVE COATING CONTAINING ALUMINUM OXIDE WHICH IS FORMED ON THE INSULATING FILM. D R A W I N G
Inventors
- 👤 Masayuki Yamamoto
- 👤 Hisashi Toki
- 👤 Hideo Shibuya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:03
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/049; Y10S148/106; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802
Claims Analysis
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-10 | 1976-04-10 | 1976-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-10 | 1980-04-10 | 1980-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-10 | 1984-04-10 | 1984-10-10 | $7700.00 | Window Closed / Lapsed |